Autor: Figielski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Autorzy:: Andrearczyk, T.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Wróbel, J.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791342.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
85.75.-d
Opis:: We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 901-903
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
Autorzy:: Andrearczyk, T.
Wosiński, T.
Figielski, T.
Mąkosa, A.
Tkaczyk, Z.
Łusakowska, E.
Wróbel, J.
Sadowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1811912.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
Opis:: We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
Autorzy:: Figielski, T.
Wosiński, T.
Pelya, O.
Sadowski, J.
Morawski, A.
Mąkosa, A.
Dobrowolski, W.
Jagielski, J.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/2035752.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.63.-b
75.60.-d
73.20.Fz
Opis:: We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 525-531
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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