Temat: power amplifier - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A Computer-controlled System of High-power Microwave Sources
Autorzy:: Korpas, P.
Gryglewski, D.
Wojtasiak, W.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/226529.pdf
Data publikacji:: 2011
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: SiC
GaN
high power amplifier
PLL synthesizer
microwave sources
Opis:: The paper presents the design and hardware implementation of a computer controlled system composed of up to four high-power microwave sources. Each source provides up to 200 W of continuous wave power. Frequency of each source is stabilized within ±0.5 ppm of the nominal frequency adjustable within 2.35÷2.6 GHz range. All four sources can be synchronized to the same frequency with computer-controlled phase shift between the signals generated by each of them. The paper concentrates on the choice of components for such a system and the properties of the realized hardware implementation.
Źródło:: International Journal of Electronics and Telecommunications; 2011, 57, 1; 121-126
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR
Autorzy:: Wojtasiak, W.
Gryglewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/226539.pdf
Data publikacji:: 2011
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: high power amplifier
SiC
MESFET
T/R module
APAR
Opis:: In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor Sparameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60°C to 140°C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.
Źródło:: International Journal of Electronics and Telecommunications; 2011, 57, 1; 135-140
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: A 100 W ISM 2.45 GHz-band power test system
Autorzy:: Wojtasiak, W.
Gryglewski, D.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/307777.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microwave precise heating
high power solid-state amplifier
push-pull GaAs FET
synthetsizer
power measurement unit
Opis:: This paper describes development of solid-state microwave power test system (MPTS) operating over 2.3 to 2.6 GHz with the output power level of 100 W for industrial applications in material processing, and for designing of microwave power industrial equipment. The MPTS unit consists of four major parts: PLL synthesizer, high power solid-state amplifier, detector probes for return losses and leakage measurement and microcontroller. The MPTS system is able to operate in either single fixed-frequency regime, or in swept mode with self-tuning for minimum reflection of a heated load.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 2; 23-28
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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