Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Wiśniewski, C." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Invasive Species and Maintaining Biodiversity in the Natural Areas – Rural and Urban – Subject to Strong Anthropogenic Pressure
Autorzy:
Fortuna-Antoszkiewicz, B.
Łukaszkiewicz, J.
Rosłon-Szeryńska, E.
Wysocki, C.
Wiśniewski, P.
Powiązania:
https://bibliotekanauki.pl/articles/124073.pdf
Data publikacji:
2018
Wydawca:
Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:
anthropogenic pressure
alien plant species
biodiversity
vegetation maintenance
Opis:
Expansion of invasive species can be clearly seen all over Poland. Foreign tree and herbaceous plant species are effectively taking over more and more habitats competing with native vegetation. This phenomenon is strongly pronounced in the areas subject to strong anthropogenic pressure. The presence of invasive plants replacing the native vegetation is a threat for biodiversity and ecological balance. The research carried out by the authors between 2011 and 2017 on selected sites (comparatively: urban and open spaces, including a 600 ha park and a 10 km long forest strip along a river) confirms the pressure exerted by invasive species irrespective of the natural conditions of a particular site or its type – in each case it is most prominent in areas where vegetation is not properly maintained or where it is not maintained at all. The research was based on the dendrological inventories and phytosociological assessments. The inventories were used for a detailed assessment of both the condition and structure of treestands, including accounting for invasive species. Phytosociological assessment can, among others, form a basis for forecasting ecological stability of individual plant communities. Uncontrolled expansion of invasive species, especially in the areas of strong anthropogenic pressure, may cause unfavourable natural succession and in consequence – destabilisation of ecological system in a given area.
Źródło:
Journal of Ecological Engineering; 2018, 19, 6; 14-23
2299-8993
Pojawia się w:
Journal of Ecological Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron DX State in CdTe:In
Autorzy:
Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
Autorzy:
Skierbiszewski, C.
Siekacz, M.
Wiśniewski, P.
Perlin, P.
Feduniewicz-Żmuda, A.
Cywiński, G.
Smalc, J.
Grzanka, S.
Grzegory, I.
Leszczyński, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047002.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:
Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 345-351
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies