Autor: Whall, T. E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Low frequency noise in Si and Si/SiGe/Si PMOSFETs
Autorzy:: Thomas, S. M.
Prest, M. J.
Fulgoni, D. J. F.
Bacon, A. R.
Grasby, T. J.
Leadley, D. R.
Parker, E. H. C.
Whall, T. E.
Powiązania:: https://bibliotekanauki.pl/articles/308779.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electronic noise
silicon-germanium heterostructures
MOSFET
dynamic threshold mode
Opis:: Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 2; 64-68
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:: Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:: https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:: Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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