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Wyszukujesz frazę "Wang, B. S." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Optimal control of semilinear evolution inclusions via discrete approximations
Autorzy:
Mordukhovich, B. S.
Wang, D.
Powiązania:
https://bibliotekanauki.pl/articles/1839178.pdf
Data publikacji:
2005
Wydawca:
Polska Akademia Nauk. Instytut Badań Systemowych PAN
Tematy:
sterowanie optymalne
analiza wariacyjna
różniczkowanie uogólnione
aproksymacja dyskretna
warunek konieczny optymalności
optimal control
variational analysis
generalized differentiation
semilinear evolution inclusions
discrete approximations
necessary optimality conditions
Opis:
This paper studies a Mayer type optimal control problem with general endpoint constraints for semilinear unbounded evolution inclusions in reflexive and separable Banach spaces. First, we construct a sequence of discrete approximations to the original optimal control problem for evolution inclusions and prove that optimal solutions to discrete approximation problems uniformly converge to a given optimal solution for the original continuous-time problem. Then, based on advanced tools of generalized differentiation, we derive necessary optimality conditions for discrete-time problems under fairly general assumptions. Combining these results with recent achievements of variational analysis in infinite-dimensional spaces, we establish new necessary optimality conditions for constrained continuous-time evolution inclusions by passing to the limit from discrete approximations.
Źródło:
Control and Cybernetics; 2005, 34, 3; 849-870
0324-8569
Pojawia się w:
Control and Cybernetics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimal control of delay-differential inclusions with multivalued initial conditions in infinite dimensions
Autorzy:
Mordukhovich, B. S.
Wang, D.
Wang, L.
Powiązania:
https://bibliotekanauki.pl/articles/969562.pdf
Data publikacji:
2008
Wydawca:
Polska Akademia Nauk. Instytut Badań Systemowych PAN
Tematy:
discrete approximations
optimal control
variational analysis
endpoint constraints
delay-differential inclusions
multivalued initial conditions
extended Euler-Lagrange formalism
generalized differentiation
Banach and Asplund spaces
necessary optimality conditions
Opis:
This paper is devoted to the study of a general class of optimal control problems described by delay-differential inclusions with infinite-dimensional state spaces, endpoints constraints, and multivalued initial conditions. To the best of our knowledge, problems of this type have not been considered in the literature, except for some particular cases when either the state space is finite-dimensional or there is no delay in the dynamics. We develop the method of discrete approximations to derive necessary optimality conditions in the extended Euler-Lagrange form by using advanced tools of variational analysis and generalized differentiation in infinite dimensions. This method consists of the three major parts: (a) constructing a well-posed sequence of discrete-time problems that approximate in an appropriate sense the original continuous-time problem of dynamic optimization; (b) deriving necessary optimality conditions for the approximating discrete-time problems by reducing them to infinite-dimensional problems of mathematical programming and employing then generalized differential calculus; (c) passing finally to the limit in the obtained results for discrete approximations to establish necessary conditions for the given optimal solutions to the original problem. This method is fully realized in the delay-differential systems under consideration.
Źródło:
Control and Cybernetics; 2008, 37, 2; 393-428
0324-8569
Pojawia się w:
Control and Cybernetics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
Autorzy:
Zhang,, S.
Zhuang, H.
Xue, C.
Li, B.
Shen, J.
Wang, D.
Powiązania:
https://bibliotekanauki.pl/articles/1814023.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
79.60.Jv
81.15.Cd
Opis:
β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
Źródło:
Acta Physica Polonica A; 2007, 112, 6; 1195-1201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813498.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
81.05.Ea
81.15.Cd
Opis:
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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