- Tytuł:
- Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films
- Autorzy:
-
Sun, Y.
Yao, B.
Meng, X.
Wang, D.
Long, D.
Hua, Z. - Powiązania:
- https://bibliotekanauki.pl/articles/1205220.pdf
- Data publikacji:
- 2014-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 68.55.-a
- Opis:
- Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.
- Źródło:
-
Acta Physica Polonica A; 2014, 126, 3; 751-756
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł