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Wyszukujesz frazę "Anisimovas, F." wg kryterium: Autor

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    Wyświetlanie 1-9 z 9
    Tytuł:
    Magnetoresistive Properties of Manganite-Based Heterojunctions
    Autorzy:
    Devenson, J.
    Vengalis, B.
    Lisauskas, V.
    Oginskis, A.
    Anisimovas, F.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807945.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    71.30.+h
    73.50.-h
    Opis:
    Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1130-1132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Response of Grained La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ Films to Microwave Radiation and the Method for Measuring Electrical Resistance of Grains
    Autorzy:
    Repšas, K.
    Laurinavičius, A.
    Vaškevičius, R.-A.
    Anisimovas, F.
    Deksnys, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047104.pdf
    Data publikacji:
    2006-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    75.47.De
    Opis:
    It was found that the response of grained La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ films to microwave radiation is of thermal nature. A nonresonant method for measuring of the electric resistance of grains was developed. It allows one to avoid the influence of the magnetic field of the wave on the measurement results. The measurements of the temperature dependences of the grain electric resistance indicate that in the vicinity of the maximum-resistance temperature T$\text{}_{m}$, the intrinsic electric resistance of the grains is more than by two orders of magnitude lower than the film resistance measured by applying the dc current. The obtained experimental results agree well with those given by resonant techniques.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 4; 537-544
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures
    Autorzy:
    Butkutė, R.
    Anisimovas, F.
    Oginskis, A. K.
    Steikūnienė, A.
    Devenson, J.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047223.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    71.30.+h
    73.50.-h
    75.70.Pa
    Opis:
    In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and related heterostructures composed of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and p-type La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$. The ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples were prepared by a conventional solid state reaction technique. Single phase La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films and La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$ Ca$\text{}_{0.33}$MnO$\text{}_{3}$ heterostructures were grown on lattice-matched perovskite NdGaO$\text{}_{3}$ substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples and thin films from thermopower data. Both ceramic samples and thin films of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ material and the heterostructures.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 111-115
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
    Autorzy:
    Anisimovas, F.
    Butkutė, R.
    Devenson, J.
    Maneikis, A.
    Stankevič, V.
    Pyragas, V.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813391.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.30.+h
    73.43.Qt
    75.47.Lx
    81.15.Fg
    Opis:
    We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 997-1000
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reversible Resistive Switching in Electrically Nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ Thin Films by Short Electrical Pulses
    Autorzy:
    Lučun, A.
    Kiprijanovič, O.
    Ašmontas, S.
    Anisimovas, F.
    Maneikis, A.
    Sužied.lis, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813407.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    Resistance changes in thin electrically nonhomogeneous $La_{0.67}Ca_{0.33}MnO_3$ films were investigated using electrical pulses of nanosecond duration in the 80-300 K temperature range. Two types of reversible switching to higher resistive states with different starting temperature induced by series of the positive pulses were observed. Possible mechanisms of the resistance switching by short electrical pulses in the vicinity of $T_m$ and at 80-90 K are discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1059-1062
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroresistance of Electrically Nonhomogeneous La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO Thin Films
    Autorzy:
    Kiprijanovič, O.
    Lučun, A.
    Ašmontas, S.
    Anisimovas, F.
    Butkutė, R.
    Maneikis, A.
    Sužiedėlis, A.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047239.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Gr
    73.50.Lw
    73.63.Bd
    Opis:
    Current and electrical field-induced electroresistive effects were investigated for La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 141-146
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
    Autorzy:
    Vengalis, B.
    Rosa, A. M.
    Devenson, J.
    Šliužienė, K.
    Lisauskas, V.
    Oginskis, A.
    Anisimovas, F.
    Pyragas, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041760.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Cg
    73.40.Lg
    75.50.Dd
    Opis:
    High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 290-293
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Frequency Dependence of Electrical Response of Polycrystalline LCMO Thin Films
    Autorzy:
    Ašmontas, S.
    Anisimovas, F.
    Balevičius, S.
    Cimmperman, P.
    Gradauskas, J.
    Lučun, A.
    Stankevič, V.
    Sužiedėlis, A.
    Vengalis, B.
    Žurauskienė, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041721.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    Influence of strong electric field in wide frequency range (from DC to 35 GHz) on electrical resistance of thin La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ polycrystalline manganite films was investigated in the range of (78÷300) K. Different behavior of resistance change vs. temperature was observed when pulsed DC electric field and microwaves were applied to the films. When pulsed DC electric field is applied the electric-field-induced resistance change ("electroresistance") of manganite film depended nearly monotonically on temperature. However, in microwave electric fields a non-monotonic character of the electroresistance temperature dependence was observed. The dependence of the electroresistance on quality of manganite films was observed in case of microwaves. The experimental findings are explained assuming different electrical current mechanisms in case of DC and microwave fields. The applied voltage drops mainly across the grains of polycrystalline film due to a presence of displacement currents in case of microwaves, whereas in DC case the voltage drop is across the grain boundaries.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 193-197
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance of Polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ Films in a Microwave Magnetic Field
    Autorzy:
    Lučun, A.
    Butkutė, R.
    Maneikis, A.
    Kiprijanovič, O.
    Anisimovas, F.
    Gradauskas, J.
    Sužiedėlis, A.
    Vengalis, B.
    Kancleris, Ž.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047240.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.47.Lx
    07.57.Kp
    Opis:
    We present new experimental evidence indicating the importance of magnetic field component of microwave field (f=9.4 GHz) for magnetoresistive properties of polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films. The microwave measurements revealed a different character of the temperature-dependent electrical resistance of polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films placed in the centre (maximal amplitude of H$\text{}_{10}$ wave vector) and at a narrow wall of the wave-guide (reduced H$\text{}_{10}$ amplitude). Theoretical estimations of the influence of substrate onto distribution of microwave electric and magnetic fields in the waveguide were performed using the finite-difference time-domain method.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 147-152
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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