Autor: Vázquez, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Single Domain Wall Propagation at Low Fields
Autorzy:: Kostyk, J.
Varga, R.
Vazquez, M.
Powiązania:: https://bibliotekanauki.pl/articles/1366478.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.60.Ch
75.60.Ej
75.78.Fg
Opis:: We have studied the domain wall propagation at low fields regime in thin glass-coated microwire of composition $Fe_{77.5}Si_{7.5}B_{15}$. It is shown, that power law describes domain wall dynamics at low fields. Such behaviour results from the interaction of the propagating domain wall with the defects present in the material. At high fields, the domain wall mobility becomes negative. This can be explained as a result of domain structure relaxation. The exponent q from power law, which determines the domain wall shape, has a value of 0.19 for both cases, without applied stress and with applied stress of 20 MPa. This means, that domain wall shape is flexible in both measurements.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 30-31
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Effect of Current Annealing on Domain Structure in Amorphous and Nanocrystalline FeCoMoB Microwires
Autorzy:: Klein, P.
Varga, R.
Onufer, J.
Ziman, J.
Badini-Confalonieri, G.
Vazquez, M.
Powiązania:: https://bibliotekanauki.pl/articles/1032776.pdf
Data publikacji:: 2017-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Kj
75.60.Ej
75.60.Jk
75.70.Kw
75.60.Ch
Opis:: The influence of current annealing on the complex domain structure in amorphous and nanocrystalline FeCoMoB microwire has been studied. The thickness of radial domain structure together with the switching field of single domain wall change as a consequence of variation of complex internal stress distribution inside metallic core. Firstly, radial domain structure thickness monotonously increases with increasing annealing DC current density for amorphous state. Switching field exhibits local minimum in nanocrystalline sample annealed at 500 MA/m^2 for 10 min when the lowest thickness of outer shell (182 nm) was observed. Such annealed sample (which magnetic properties exhibit excellent temperature stability) is suitable candidate for miniaturized sensor construction for sensing the magnetic field or mechanical stress.
Źródło:: Acta Physica Polonica A; 2017, 131, 4; 681-683
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Stress Dependence of the Switching Field in Glass Coated Microwires
Autorzy:: Komová, E.
Varga, M.
Varga, R.
Vojtaník, P.
Torrejon, J.
Provencio, M.
Vázquez, M.
Powiązania:: https://bibliotekanauki.pl/articles/1813586.pdf
Data publikacji:: 2008-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Kj
75.60.Ej
Opis:: Here we present the study of the stress dependence of the switching field in amorphous glass-coated magnetic microwire of composition FeNiMoB. Samples were heat treated in the temperature range from 250°C up to 500°C in order to obtain relaxed and nanocrystalline state. As-cast microwire shows strong stress dependence of the switching field, which decreases with the temperature of annealing. The sample is almost not stress dependent after heat treatment at 425°C, because the magnetostriction vanishes. However, the strongest stress dependence was found for the microwire annealed at 400°C, just below the optimal annealing temperature to obtain the nanocrystalline state.
Źródło:: Acta Physica Polonica A; 2008, 113, 1; 135-138
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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