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Wyszukujesz frazę "Wasik, B." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Magnetoluminescence Studies of GaN:Fe
Autorzy:
Niedźwiadek, A.
Wysmołek, A.
Wasik, D.
Potemski, M.
Szczytko, J.
Kamińska, M.
Twardowski, A.
Łucznik, B.
Pastuszka, B.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2047373.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
71.55.Eq
71.20.Be
Opis:
We report on magneto-optical studies on iron doped GaN crystals grown using hydride vapor phase epitaxy method on bulk GaN substrate. The investigated samples showed an intensive 1.3 eV luminescence band, characteristic of Fe$\text{}^{3+}$(d$\text{}^{5}$) center in GaN. A high quality of the investigated samples allowed us to observe a well-resolved fine structure of intracenter transitions between $\text{}^{4}$T$\text{}_{1}$(G) and $\text{}^{6}$A$\text{}_{1}$(S) states, consisting of four sharp no-phonon lines. All the observed no-phonon lines showed pronounced splittings in magnetic field. From the analysis of the magneto-optical data, the structure of split $\text{}^{4}$T$\text{}_{1}$(G) multiplet in the magnetic field applied along c-axis of GaN crystals was established.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 177-182
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Mn-Related Defect Band in InP
Autorzy:
Macieja, B.
Korona, K. P.
Piersa, M.
Witowski, A. M.
Wasik, D.
Wysmołek, A.
Strzelecka, G.
Hruban, A.
Surma, B.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2036033.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ee
72.20.Jv
Opis:
Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn$\text{}^{2+}$(d$\text{}^{5}$) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d$\text{}^{5}$ or d$\text{}^{5}$ plus a hole localized about 7Å around corresponding Mn core.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 637-642
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Physical Properties of SiC-GaAs Nano-Composites
Autorzy:
Kalisz, G.
Grzanka, E.
Wasik, D.
Świderska-Środa, A.
Gierlotka, S.
Borysiuk, J.
Kamińska, M.
Twardowski, A.
Pałosz, B.
Powiązania:
https://bibliotekanauki.pl/articles/2043724.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
07.35.+k
Opis:
Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 717-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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