Autor: Płaczek, E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:: Trzmiel, J.
Płaczek-Popko, E.
Zielony, E.
Gumienny, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1791364.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Gs
61.72.jj
77.22.-d
Opis:: The dielectric response of gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for $Cd_{0.99}Mn_{0.01}Te:Ga$ samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 956-958
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts
Autorzy:: Płaczek-Popko, E.
Trzmiel, J.
Gumienny, Z.
Wojtyna, E.
Szatkowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1811971.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
85.30.De
84.37.+q
Opis:: The dielectric response of Au-CdTe gallium doped Schottky contacts was investigated by impedance spectroscopy in the frequency range from 0.2 Hz to 3 MHz, at temperatures in the range from 77 K to 300 K. Combined modulus and impedance spectroscopic plots were analyzed to study the response of the structure. The data were fitted with the simple RC circuit composed of a depletion layer capacitance in parallel with resistance and a series resistance of the bulk CdTe:Ga. The activation energy of the bulk trap obtained from the Arrhenius plot of the resistance was found to be equal to 0.08 eV, close to the value 0.09 eV obtained from the impedance-modulus spectroscopy. The trap dominant in CdTe:Ga is possibly the DX center related, as it has been observed that this is the dominant trap in the material.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1279-1283
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and $Cd_{0.99}Mn_{0.01}Te$
Autorzy:: Trzmiel, J.
Płaczek-Popko, E.
Weron, K.
Szatkowski, J.
Wojtyna, E.
Powiązania:: https://bibliotekanauki.pl/articles/1812001.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Gs
61.72.jj
78.20.Bh
Opis:: The low temperature non-exponential transients of photoconductivity build-up in gallium doped $Cd_{0.99}Mn_{0.01}Te$ and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of $Cd_{0.99}Mn_{0.01}Te:Ga$ the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1417-1420
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:: Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Powiązania:: https://bibliotekanauki.pl/articles/1791335.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ga
73.21.La
73.20.Hb
Opis:: In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 885-887
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja