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Wyszukujesz frazę "Tomaszewski, P." wg kryterium: Autor

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    Wyświetlanie 1-13 z 13
    Tytuł:
    Siedliskowe uwarunkowania występowania wątrobowca Frullania dilatata w Wigierskim Parku Narodowym (północno-wschodnia Polska)
    Habitat characteristics which determine liverwort Frullania dilatata occurrence in the Wigry National Park (north-eastern Poland)
    Autorzy:
    Gorski, P.
    Tomaszewski, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2118640.pdf
    Data publikacji:
    2019
    Wydawca:
    Uniwersytet Przyrodniczy w Poznaniu
    Tematy:
    epiphytes
    humidity
    temperature
    Frullania dilatata
    Wigry National Park
    Polska
    Opis:
    The aim of the article was to verify the hypothesis that humidity, temperature and light con- ditions play a fundamental role in the distribution of Frullania dilatata within the forest complexes in the Wigry National Park. 41 monitoring localities were selected in places of epiphytic liverworts occurrence (22 sites with F. dilatata, 19 – without these plant). Humidity and temperature were recorded hourly during one year. Light conditions on the tested sites were determined on the basis of hemispherical photos. Additional parameters were calculated based on the digital terrain model in the SagaGis program. The results indicate that the hypothesis is false.
    Źródło:
    Steciana; 2019, 23, 4; 41-49
    1689-653X
    Pojawia się w:
    Steciana
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Entanglement Detection by Current Measurements in Double Quantum Dot System
    Autorzy:
    Busz, P.
    Rożek, P.
    Tomaszewski, D.
    Martinek, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1386781.pdf
    Data publikacji:
    2015-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.67.Mn
    03.67.Bg
    73.23.-b
    Opis:
    The development of quantum computing in quantum dots systems requires highly efficient and continuous solid-state source of spatially separated spin-entangled electrons. One of the approaches is a use of double quantum dot system connected to superconducting lead, where Cooper pairs provide a source of naturally entangled electrons. Apart from the source, an useful tool for detection of quantum entanglement is needed. We present entanglement detection by the ferromagnetic electrodes using entanglement witness operator method and direct measurement of spin polarized current in the system. We investigate requirements that have to be fulfilled by ferromagnetic detectors.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 2; 490-492
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thuja ×soeegaardii (Cupressaceae) – a new name for an old hybrid
    Autorzy:
    Kosinski, P.
    Tomaszewski, D.
    Zielinski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2130188.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Instytut Dendrologii PAN
    Tematy:
    Thuja ‘Green Giant’
    Horsholm Arboretum
    Bent Søegaard
    allopatric hybridization
    Opis:
    Thuja ×soeegaardii, a hybrid of Th. plicata Donn ex D.Don and Th. standishii (Gordon) Carrière, is described as a new nothospecies from the Kórnik Arboretum, Poland, based on plants obtained in 1988 from the Botanical Garden in Gothenburg, Sweden. The hybrid was found for the first time at the Hørsholm Arboretum, Denmark, in 1938, among seedlings grown from seeds collected from Thuja standishii. Plants grown from rooted scions of this hybrid were planted in several places within the Hørsholm Arboretum. Soon, the hybrid plants were gifted to the Botanical Gardens in Copenhagen and Gothenburg as well to the Poulsen’s Plant Nursery in Kvistgård. In 1967 seedlings were sent from Kvistgård to the National Arboretum in Washington, where one of them developed into a particularly showy, lush and vigorous plant characterized by a dense, narrow, conical crown. The offspring obtained from rooted scions turned out to be very drought and wind-resistant, especially suitable for the formation of tall hedges and windbreak screens. This plant, now very widespread in cultivation, especially in the United States, goes by the name of Thuja ‘Green Giant’. In terms of morphology, many features of Th. ×soeegaardii are intermediate as compared to the parent species. From the Th. plicata, it differs by the following characteristics: leaves not or only weakly shining above, lateral leaves with inwardly curved (not straight) apices, the apical part of lower central leaves thickened and slightly bent from the stem (not appressed), glands on central leaves only weakly visible, central leaves of primary shoots acuminate (not long acuminate) and seed wings sparsely papillose in the upper part (only rarely smooth). From Th. standishii, it can be distinguished by the less glaucous upper leaf surface, the less protruding apical part of lower central leaves, at least faintly visible glands on central leaves, acuminate (not acute) central leaves of primary shoots and less distinctly papillose upper part of seed wings.
    Źródło:
    Dendrobiology; 2022, 87; 113-121
    1641-1307
    Pojawia się w:
    Dendrobiology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions
    Autorzy:
    Zaborowski, M.
    Tomaszewski, D.
    Jaroszewicz, B.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/308235.pdf
    Data publikacji:
    2009
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    chlorine ion sensor
    potentiometric sensor
    p-n junction thermometer
    Opis:
    Three sensors for chemical and physical examination of aqueous solutions were presented in the paper. An Au potentiometric electrode, an AgCl chlorine ion sensor and a p-n junction thermometer were developed. Their layout and internal structure were explained in the light of the manufacturing process. The device characteristics were measured in conditions corresponding to normal operation of the devices. Basic electrical parameters of the developed structures, as well as their sensitivity to environmental parameter variation were estimated.
    Źródło:
    Journal of Telecommunications and Information Technology; 2009, 4; 71-75
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
    Autorzy:
    Kucharski, K.
    Zagrajek, P.
    Tomaszewski, D.
    Panas, A.
    Głuszko, G.
    Marczewski, J.
    Kopyt, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1186027.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    85.60.Gz
    42.79.Pw
    Opis:
    Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1193-1195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A versatile tool for extraction of MOSFETs parameters
    Autorzy:
    Tomaszewski, D.
    Kociubiński, A.
    Marczewski, J.
    Kucharski, K.
    Domański, K.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/308856.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOSFETs parameters
    SPICE
    least squares method
    Opis:
    Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 129-134
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Entanglement Detection with Non-Ideal Ferromagnetic Detectors
    Autorzy:
    Rożek, P.
    Busz, P.
    Kłobus, W.
    Tomaszewski, D.
    Grudka, A.
    Baumgartner, A.
    Schönenberger, C.
    Martinek, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1386794.pdf
    Data publikacji:
    2015-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.67.Mn
    03.67.Bg
    73.23.-b
    Opis:
    Entangled states are essential in basics quantum communication protocols and quantum cryptography. Ferromagnetic contacts can work as a spin detector, giving possibility of converting information about electron spin to the electric charge, and therefore, detection of entangled states with the electric current measurements is possible. Method of confirming entanglement with non-ideal detectors is presented, the impact of decoherence and noise on states and quality of entanglement is discussed. Entanglement witness (EW) operator method is compared with the CHSH inequalities approach. Required spin polarization for the EW is lower than for the CHSH inequalities. System with asymmetric spin polarizations of detectors was analyzed, including the CHSH inequalities and the EW method.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 2; 493-495
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical characterization of ISFETs
    Autorzy:
    Tomaszewski, D.
    Yang, C. M.
    Jaroszewicz, B.
    Zaborowski, M.
    Grabiec, P.
    Pijanowska, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308663.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ISFET
    CMOS
    electrical measurements
    I-V characteristics
    characterization
    parameters extraction
    Opis:
    Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 55-60
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multi-Domain Modeling and Simulations of the Heterogeneous Systems
    Autorzy:
    Pieniek, T.
    Janczyk, G.
    Janusz, P.
    Szynka, J.
    Grabiec, P.
    Kociubiński, A.
    Ekwińska, M.
    Tomaszewski, D.
    Malinowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/308063.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    Corona
    Coventor
    3D integration
    e-Cubes
    heterogeneous systems
    MATLAB
    modeling
    simulation
    Opis:
    This paper discusses the multi-domain modeling and simulation issues of the design and analysis of heterogeneous integrated systems. Modeling and simulation methodlogy and tools are also discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 34-39
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Piezoresistive sensors for atomic force microscopy - numerical simulations by means of virtual wafer fab
    Autorzy:
    Dębski, T.
    Barth, W.
    Rangelow, I.W.
    Domański, K.
    Tomaszewski, D.
    Grabiec, P.
    Jakubowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/307644.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    atomic force microscopy (AFM)
    piezoresistive sensors
    technology simulation
    technology characterization
    Opis:
    An important element in microelectronics is the comparison of the modelling and measurements results of the real semiconductor devices. Our paper describes the final results of numerical simulation of a micromechanical process sequence of the atomic force microscopy (AFM) sensors. They were obtained using the virtual wafer fab (VWF) software, which is used in the Institute of Electron Technology (IET). The technology mentioned above is used for fabrication of the AFM cantilevers, which has been designed for measurement and characterization of the surface roughness, the texturing, the grain size and the hardness. The simulation are very useful in manufacturing other microcantilever sensors.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 35-39
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
    Autorzy:
    Videlier, H.
    Dyakonova, N.
    Teppe, F.
    Consejo, C.
    Chenaud, B.
    Knap, W.
    Lusakowski, J.
    Tomaszewski, D.
    Marczewski, J.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492958.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    Opis:
    We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 927-929
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
    Autorzy:
    Barański, M.
    Domański, K.
    Grabiec, P.
    Grodner, M.
    Jaroszewicz, B.
    Kociubiński, A.
    Kucewicz, W.
    Kucharski, K.
    Marczewski, J.
    Niemiec, H.
    Sapor, M.
    Tomaszewski, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308825.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SOI CMOS technology
    pixel detector
    test structure
    Opis:
    This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 85-93
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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