Autor: Marczewski, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A versatile tool for extraction of MOSFETs parameters
Autorzy:: Tomaszewski, D.
Kociubiński, A.
Marczewski, J.
Kucharski, K.
Domański, K.
Grabiec, P.
Powiązania:: https://bibliotekanauki.pl/articles/308856.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MOSFETs parameters
SPICE
least squares method
Opis:: Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 129-134
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: CMOS Readout Circuit Integrated with Ionizing Radiation Detectors
Autorzy:: Szymański, A.
Obrębski, D.
Marczewski, J.
Tomaszewski, D.
Grodner, M.
Pieczyński, J.
Powiązania:: https://bibliotekanauki.pl/articles/226502.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: readout electronics
ASIC
SOI
ionizing radiation detectors
Opis:: This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon proces deployed.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 1; 117-124
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
Autorzy:: Kucharski, K.
Zagrajek, P.
Tomaszewski, D.
Panas, A.
Głuszko, G.
Marczewski, J.
Kopyt, P.
Powiązania:: https://bibliotekanauki.pl/articles/1186027.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.Tv
85.60.Gz
42.79.Pw
Opis:: Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1193-1195
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
Autorzy:: Videlier, H.
Dyakonova, N.
Teppe, F.
Consejo, C.
Chenaud, B.
Knap, W.
Lusakowski, J.
Tomaszewski, D.
Marczewski, J.
Grabiec, P.
Powiązania:: https://bibliotekanauki.pl/articles/1492958.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.Tv
Opis:: We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 927-929
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
Autorzy:: Barański, M.
Domański, K.
Grabiec, P.
Grodner, M.
Jaroszewicz, B.
Kociubiński, A.
Kucewicz, W.
Kucharski, K.
Marczewski, J.
Niemiec, H.
Sapor, M.
Tomaszewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/308825.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI CMOS technology
pixel detector
test structure
Opis:: This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 85-93
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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