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    Wyświetlanie 1-8 z 8
    Tytuł:
    The Role of Internal Electric Fields in III-N Quantum Structure
    Autorzy:
    Perlin, P.
    Łepkowski, S. P.
    Teisseyre, H.
    Suski, T.
    Grandjean, N.
    Massies, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2027477.pdf
    Data publikacji:
    2001-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Hp
    78.55.Cr
    78.67.Hc
    Opis:
    Binary nitrides: of wurtzite GaN, AlN, InN, and their solid solutions represent a family of semiconductors of crucial importance for modern optoelectronics. Strained quantum wells, like GaN/AlGaN and specially InGaN/GaN, form active layers of the light emitters working in green-UV part of the spectrum. The operation of these devices strongly depends on the emission spectra of considered quantum structures which are greatly influenced by the presence of built-in electric fields. The electric field acting via quantum confined Stark effect in the mentioned structures changes the energies and intensity of the emitted light. The effect can lead to the spectral shift of a photo- and electroluminescence by many hundreds of meV. In this review we will briefly cover the influence of internal electric fields on both optical and electrical properties of nitride based heterostructures and quantum wells. We would like to draw reader's attention to the usefulness of high-pressure investigation in the study of electric fields in nitrides and to show how the interpretation of these experiments influences the way we calculate the electric fields in the quantum structures.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 2; 261-270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)
    Autorzy:
    Perlin, P.
    Teisseyre, H.
    Suski, T.
    Leszczyński, M.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931916.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    71.55.Eq
    Opis:
    We investigated free carriers related optical absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 141-143
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Semiconducting Nitrides Energy Gap under Pressure
    Autorzy:
    Perlin, P.
    Gorczyca, I.
    Teisseyre, H.
    Suski, T.
    Litwin-Staszewska, E.
    Porowski, S.
    Grzegory, I.
    Christensen, N. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1921585.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    Opis:
    In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 674-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
    Autorzy:
    Teisseyre, H.
    Perlin, P.
    Leszczyński, M.
    Suski, T.
    Dmowski, L.
    Grzegory, I.
    Porowski, S.
    Jun, J.
    Moustakas, T. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873040.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    78.50.Ge
    78.66.Fd
    Opis:
    Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 403-406
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
    Autorzy:
    Leszczyński, M.
    Teisseyre, H.
    Suski, T.
    Grzegory, I.
    Boćkowski, M.
    Jun, J.
    Pałosz, B.
    Porowski, S.
    Pakuła, K.
    Baranowski, J. M.
    Barski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952040.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ji
    61.72.Vv
    Opis:
    Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Resistivity GaN Single Crystalline Substrates
    Autorzy:
    Porowski, S.
    Boćkowski, M.
    Łucznik, B.
    Grzegory, I.
    Wróblewski, M.
    Teisseyre, H.
    Leszczyński, M.
    Litwin-Staszewska, E.
    Suski, T.
    Trautman, P.
    Pakuła, K.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968415.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.80.Ey
    Opis:
    High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 958-962
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction
    Autorzy:
    Teisseyre, H.
    Szymański, M.
    Khachapuridze, A.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Łucznik, B.
    Kamler, G.
    Kryśko, M.
    Suski, T.
    Perlin, P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047728.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    78.45.+h
    78.66.Fd
    Opis:
    The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm$\text{}^{2}$ for a 700μm long cavity (at room temperature).
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 467-472
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
    Autorzy:
    Grzegory, I.
    Boćkowski, M.
    Krukowski, S.
    Łucznik, B.
    Wróblewski, M.
    Weyher, J.
    Leszczyński, M.
    Prystawko, P.
    Czernecki, R.
    Lehnert, J.
    Nowak, G.
    Perlin, P.
    Teisseyre, H.
    Purgał, W.
    Krupczyński, W.
    Suski, T.
    Dmowski, L.
    Litwin-Staszewska, E.
    Skierbiszewski, C.
    Łepkowski, S.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030423.pdf
    Data publikacji:
    2001-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Opis:
    In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
    Źródło:
    Acta Physica Polonica A; 2001, 100, Supplement; 229-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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