- Tytuł:
- Peculiarities of neutron interaction with boron containing semiconductors
- Autorzy:
-
Didyk, A. Y.
Hofman, A.
Szteke, W.
Hajewska, E.
Vlasukova, L. A. - Powiązania:
- https://bibliotekanauki.pl/articles/148104.pdf
- Data publikacji:
- 2009
- Wydawca:
- Instytut Chemii i Techniki Jądrowej
- Tematy:
-
semiconductors
thermal neutrons
point defects
vacancies
damage concentration
thermal neutron fluence
cross-section of damage creation
fission fragments
lithium
helium
alfa-particles
diffusion of impurities
homogeneity of damage and active impurities - Opis:
- Abstract. The results of point defect creation calculation in B4C, BN and BP semiconductor single crystals irradiated in the fast neutron reactor IBR-2 are presented. It has been shown that during the thermal neutron interaction with light isotope boron atoms (10B) the damage creation by means of fission nuclear reaction fragments (alfa-particles and 7Li recoil nuclei) exceeds the damage created by fast neutrons (En greater than 0.1 MeV) by more than two orders of value. It has been concluded that such irradiation can create a well developed radiation defect structure in boron-containing crystals with nearly homogeneous vacancy depth distribution. This may be used in technological applications for more effective diffusion of impurities implanted at low energies or deposited onto the semiconductor surface. The developed homogeneous vacancy structure is very suitable for the radiation enhanced diffusion of electrically charged or neutral impurities from the surface into the technological depth of semiconductor devices under post irradiation treatment.
- Źródło:
-
Nukleonika; 2009, 54, 3; 163-168
0029-5922
1508-5791 - Pojawia się w:
- Nukleonika
- Dostawca treści:
- Biblioteka Nauki
Artykuł