Autor: Johnson, L.R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Gd 4f and 5d Electrons in Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te Valence Band
Autorzy:: Orłowski, B. A.
Kowalski, B. J.
Gołacki, Z.
Story, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1933933.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Fi
Opis:: The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 857-860
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:: Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.Fx
79.60.-i
Opis:: We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
Autorzy:: Pietrzyk, M. A.
Kowalski, B. J.
Orłowski, B. A.
Knoff, W.
Osinniy, V.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2047678.pdf
Data publikacji:: 2007-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Mq
Opis:: We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
Źródło:: Acta Physica Polonica A; 2007, 112, 2; 275-281
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
Autorzy:: Orlowski, B. A.
Kowalski, B. J.
Dziawa, P.
Pietrzyk, M.
Mickievicius, S.
Osinniy, V.
Taliashvili, B.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2044511.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Mq
Opis:: Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 803-807
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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