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Wyszukujesz frazę "Rogachev, A." wg kryterium: Wszystkie pola


Wyświetlanie 1-2 z 2
Tytuł:
Technology and Investigation of Ohmic Contacts to Thermoelectric Materials
Autorzy:
Shtern, Y.
Mironov, R.
Shtern, M.
Sherchenkov, A.
Rogachev, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398783.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Np
Opis:
Technology is developed, materials and regimes of the fabrication of ohmic contacts to the effective thermoelectric materials $Bi_{2}Te_{2.8}Se_{0.2}$ (n-type) and $Bi_{0.5}Sb_{1.5}Te_{3}$ (p-type) are determined. Ohmic contacts were obtained by the vacuum deposition of nickel. Factors determining adhesion strength and resistivity of fabricated contacts are determined. Process of surface preparation of the thermoelectric materials before the ohmic contact deposition is optimized during the technology development. The use of electrochemical polishing, ultrasound treatment, finish cleaning in toluene and isopropyl alcohol vapor, and annealing in vacuum allowed achieving stable results in the formation of contacts. It was shown that contacts fabricated using of electron-beam evaporation of nickel possess maximum adhesion strength of 18-19 N/mm². It was found that high adhesion is caused by the existence of transition layer in the metal-thermoelectric material contact range, formed due to the interaction of metal with the components of thermoelectric material. Proposed technology allows obtaining ohmic contacts with the resistance of the unit area not exceeding $10^{-10}$ Ohm m².
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 785-787
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Technology of Thin Film Fabrication on Porous Metal Oxide Substrates
Autorzy:
Shtern, Yu.
Shtern, M.
Mironov, R.
Sherchenkov, A.
Rogachev, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398772.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Np
Opis:
One of the main issues of the device technology on metal-dielectric (MD) substrates is poor adhesion of thin metallic films, which are used for interconnections in electrical circuits. Films are formed by vacuum deposition on a porous dielectric layer of substrates. The presence of pores sufficiently complicates the cleaning of the substrate surface, which significantly decreases the adhesion of the film deposited on it. Technology of metal films with high adhesion, fabricated by ion-plasma method is proposed in this work. Films were deposited on MD substrates produced by electrochemical oxidation of aluminum alloys. The main operations of the technology are the following. Removal of residual electrolyte after the oxidation is carried out by rinsing of substrates initially under running hot water, and then in deionized water, followed by drying in a flow of heated nitrogen. Annealing of substrates under the pressure of $10^{-3}$ Pa and temperature of 550-570 K for 20 min is carried on in the vacuum chamber before the deposition of metal films. Copper is used as the main material of the interconnection films. Adhesion sublayer is fabricated on the basis of chromium or vanadium, which have high enthalpy of the oxide formation. Measurements showed that the copper films with the thickness of 1.5 μm, deposited on the vanadium sublayer with the thickness of 0.12 μm, which is comparable with the roughness of oxide layer, have adhesion of $25 N//mm^{2}$ at the temperature of 520 K. Investigation of adhesion was carried on by the method of direct tear off with the error of up to 10%.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 776-778
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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