- Tytuł:
- Electronic Phase Transition in Layered Materials 1T-TaS$\text{}_{x}$Se$\text{}_{2-x}$ Probed by Cryogenic STM/STS
- Autorzy:
-
Hasegawa, T.
Shiino, O.
Yamaguchi, W.
Endo, T.
Sugawara, H.
Kitazawa, K. - Powiązania:
- https://bibliotekanauki.pl/articles/1968713.pdf
- Data publikacji:
- 1998-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.30.+h
71.20.-b - Opis:
- A metal-insulator transition, Mott transition, in layered materials 1T-TaS$\text{}_{x}$Se$\text{}_{2-x}$ was investigated by cryogenic scanning tunneling microscopy/ spectroscopy. At 77 K, tunneling spectra in the insulating phase showed a conduction band with almost half filling, which becomes narrower as x decreases. Around the transition point x≈1.4 at 77 K, we observed a sign of gap opening without an overshooting peak at zero bias, supporting the Mott localization picture in which a carrier number vanishes at the transition point. From the site-specified scanning tunneling spectroscopy measurements, furthermore, electrons were found to localize at the charge density wave crest positions. In 1T-TaS$\text{}_{2}$, we have also found that both metallic and insulating phases coexist in a nanometer scale just above the transition temperature, 180 K. >From the minimum size of the insulating region, the coherence length of Mott insulating state was evaluated to be≈5 nm.
- Źródło:
-
Acta Physica Polonica A; 1998, 93, 2; 297-305
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł