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Wyszukujesz frazę "Shapovalov, A." wg kryterium: Autor

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    Tytuł:
    Vapordynamic thermosyphon – heat transfer two-phase device for wide applications
    Autorzy:
    Vasiliev, L.
    Zhuravlyov, A.
    Shapovalov, A.
    Rodin, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/240265.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    thermosyphon
    vapordynamic thermosyphon
    long horizontal condenser
    porous coating
    heat transfer intensification
    termosyfon
    powłoka porowata
    intensyfikacja wymiany ciepła
    Opis:
    Vapordynamic thermosyphon (VDT) is an efficient heat transfer device. The two-phase flow generation and dynamic interaction between the liquid slugs and vapor bubbles in the annular minichannel of the VDT condenser are the main features of such thermosyphon, which allowed to increase its thermodynamic efficiency. VDT can transfer heat in horizontal position over a long distance. The condenser is nearly isothermal with the length of tens of meters. The VDT evaporators may have different forms. Some practical applications of VDT are considered.
    Źródło:
    Archives of Thermodynamics; 2015, 36, 4; 65-76
    1231-0956
    2083-6023
    Pojawia się w:
    Archives of Thermodynamics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and transport characteristics of tunnel junctions with hybrid semiconductor barriers with quantum dots
    Autorzy:
    Shaternik, V.
    Shapovalov, A.
    Prikhna, T.
    Suvorov, O.
    Skorik, M.
    Shaternik, A.
    Bondarchuk, V.
    Zubov, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1052840.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.50.+r
    74.81.-g
    Opis:
    We propose to realize MoRe/SiO_x(W)/MoRe hybrid junctions by using self-organization effects for the creation of quantum dots (tungsten clusters) in the semiconductor barriers consisting of a mixture of silicon and silicon oxide. Current-voltage characteristics of the MoRe/SiO_x(W)/MoRe samples have been measured in a wide voltage range from -900 to 900 mV at temperatures from 4.2 to 77 K. At low temperatures and for a comparatively small W content in the hybrid barrier, the heterostructures exhibited current-voltage curves of an unusual shape. Single or several current peaks caused by electron tunneling through the allowed states in the barrier have been observed in the transport characteristics. With increasing temperature, superconducting fluctuations in the MoRe electrodes become unimportant, and the current-voltage curve of a heterostructure follows the Ohm law. At last, we present theoretical description of the charge transport in such inhomogeneous systems with account of many-electron processes.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 1060-1064
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
    Autorzy:
    Prikhna, T.
    Gawalek, W.
    Savchuk, Ya.
    Sergienko, N.
    Moshchil, V.
    Sokolovsky, V.
    Vajda, J.
    Tkach, V.
    Karau, F.
    Weber, H.
    Eisterer, M.
    Joulain, A.
    Rabier, J.
    Chaud, X.
    Wendt, M.
    Dellith, J.
    Danilenko, N.
    Habisreuther, T.
    Dub, S.
    Meerovich, V.
    Litzkendorf, D.
    Nagorny, P.
    Kovalev, L.
    Schmidt, Ch.
    Melnikov, V.
    Shapovalov, A.
    Kozyrev, A.
    Sverdun, V.
    Kosa, J.
    Vlasenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1549637.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Sv
    74.81.Bd
    74.70.Ad
    74.78.Na
    74.62.Fj
    74.25.Ld
    74.62.Dh
    74.25.Ha
    Opis:
    Materials of the Y-Ba-Cu-O (melt-textured $YBa_{2}Cu_{3}O_{7-δ}$-based materials or MT-YBCO) and Mg-B-O ($MgB_{2}$-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogeneities in their structure can be effectively used in cryogenic technique, in particular in fault current limiters and electrical machines (electromotors, generators, pumps for liquid gases, etc.). The developed processes of high-temperature (900-800°C) oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2 GPa) synthesis of $MgB_{2}$-based materials allowed us to attain high superconductive (critical current densities, upper critical fields, fields of irreversibility, trapped magnetic fields) and mechanical (hardness, fracture toughness, Young modulus) characteristics. It has been shown that the effect of materials properties improvement in the case of MT-YBCO was attained due to the formation of high twin density (20-22 $μm^{-1}$), prevention of macrocracking and reduction (by a factor of 4.5) of microcrack density, and in the case of $MgB_{2}$-based materials due to the formation of oxygen-enriched as compared to the matrix phase fine-dispersed Mg-B-O inhomogeneities as well as inclusions of higher borides with near-$MgB_{12}$ stoichiometry in the Mg-B-O matrix (with 15-37 nm average grain sizes). The possibility is shown to obtain the rather high $T_{c}$ (37 K) and critical current densities in materials with $MgB_{12}$ matrix (with 95% of shielding fraction as calculated from the resistant curve).
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 7-14
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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