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    Wyświetlanie 1-6 z 6
    Tytuł:
    Determination of Exchange and Rotatable Anisotropies in Co₂FeSi/IrMn Exchange Coupled Structures using Broadband Ferromagnetic Resonance
    Autorzy:
    Głowiński, H.
    Schmidt, M.
    Krysztofik, A.
    Gościańska, I.
    Dubowik, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1386989.pdf
    Data publikacji:
    2015-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.30.Et
    75.60.Jk
    Opis:
    We determined exchange $H_{ex}$ and rotatable $H_{rot}$ anisotropy fields of multilayers that comprise 10 nm Co₂FeSi (CFS) layers exchange coupled to 20 nm IrMn layers by using ferromagnetic resonance with a vector network analyzer (VNA-FMR). The multilayer structures consist of IrMn/bottom (b)-CFS/IrMn/middle (m)-CFS/IrMn/top (t)-CFS/IrMn layers so that each CFS layer is surrounded by a pair of IrMn layers. In the structures, the exchange bias field propagates in such a way that $H_{ex}^{t}$ > $H_{ex}^{m}$ > $H_{ex}^{b}$ for the top, middle, and bottom layer, respectively. FMR response measured along the exchange bias (EB) axis consist of only two absorptions related to the (b+m)- and (t)-CFS layers, respectively. Exchange and rotatable anisotropy determined independently from angular and dispersion measurements of the resonance fields are nearly the same. Rotatable anisotropy field scales with the exchange bias field in these complex structures.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 2; 531-533
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High-Quality Ni-Fe/Cu Multilayer Films with Antiferromagnetic Coupling
    Autorzy:
    Stobiecki, F.
    Dubowik, J.
    Luciński, T.
    Szymański, B.
    Rohrmann, H.
    Röll, K.
    Schmidt, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955455.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Tt
    76.50.+g
    Opis:
    We report structural and magnetic properties of Ni$\text{}_{83}$Fe$\text{}_{17}$/Cu multilayer films with various buffer layer and sublayer thicknesses of copper d$\text{}_{Cu}$ and Permalloy d$\text{}_{Py}$ deposited by face-to-face sputtering. The following features prove a good quality of our films: a well-layered structure, complete antiferromagnetic coupling with a low coupling strength (2×10$\text{}^{-5}$ J/m$\text{}^{2}$ for d$\text{}_{Cu}$=1 nm and 10$\text{}^{-6}$ J/m$\text{}^{^2}$ for d$\text{}_{Cu}$=2.1 nm) and a low coercive field which make them attractive for possible applications as giant magnetoresistance sensors.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 277-280
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications
    Autorzy:
    Zybała, R.
    Mars, K.
    Mikuła, A.
    Bogusławski, J.
    Soboń, G.
    Sotor, J.
    Schmidt, M.
    Kaszyca, K.
    Chmielewski, M.
    Ciupiński, L.
    Pietrzak, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/352428.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    antimony telluride
    thermoelectric materials
    thin films
    PVD magnetron sputtering
    topological insulator
    Opis:
    Antimony telluride (Sb2 Te3 ) is an intermetallic compound crystallizing in a hexagonal lattice with R-3m space group. It creates a c lose packed structure of an ABCABC type. As intrinsic semiconductor characterized by excellent electrical properties, Sb2 Te3 is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb2 Te3 in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3.Applications of Sb2 Te3 in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb2 Te3 were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb2 Te3 thin films for optical uses have been also made.
    Źródło:
    Archives of Metallurgy and Materials; 2017, 62, 2B; 1067-1070
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of nanostructured bulk cobalt triantimonide doped with tellurium and indium prepared by pulsed plasma in liquid method
    Autorzy:
    Zybała, R.
    Schmidt, M.
    Kaszyca, K.
    Chmielewski, M.
    Kruszewski, M. J.
    Jasiński, M.
    Rajska, M.
    Ciupiński, Ł.
    Powiązania:
    https://bibliotekanauki.pl/articles/200831.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    thermoelectric materials
    nanostructured materials
    skutterudite
    energy harvesting
    spark plasma sintering
    Opis:
    One of the ways to decrease thermal conductivity is nano structurization. Cobalt triantimonide (CoSb3) samples with added indium or tellurium were prepared by the direct fusion technique from high purity elements. Ingots were pulverized and re-compacted to form electrodes. Then, the pulsed plasma in liquid (PPL) method was applied. All materials were consolidated using rapid spark plasma sintering (SPS). For the analysis, methods such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) with a laser flash apparatus (LFA) were used. For density measurement, the Archimedes’ method was used. Electrical conductivity was measured using a standard four-wire method. The Seebeck coefficient was calculated to form measured Seebeck voltage in the sample placed in a temperature gradient. The preparation method allowed for obtaining CoSb3 nanomaterial with significantly lower thermal conductivity (10 Wm–1K–1 for pure CoSb3 and 3 Wm–1K–1 for the nanostructured sample in room temperature (RT)). The size of crystallites (from SEM observations) in the powders prepared was about 20 nm, joined into larger agglomerates. The Seebeck coefficient, α, was about –200μVK–1 in the case of both dopants, In and Te, in microsized material and about −400 μK−1 for the nanomaterial at RT. For pure CoSb3 , α was about 150 μVK−1 and it stood at −50 μVK−1 for nanomaterial at RT. In bulk nanomaterial samples, due to a decrease in electrical conductivity and inversion of the Seebeck coefficient, there was no increase in ZT values and the ZT for the nanosized material was below 0.02 in the measured temperature range, while for microsized In-doped sample it reached maximum ZT = 0.7 in (600K).
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 125-134
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
    Autorzy:
    Engström, O.
    Raeissi, B.
    Piscator, J.
    Mitrovic, I. Z.
    Hall, S.
    Gottlob, H. D. B.
    Schmidt, M.
    Hurley, P. K.
    Cherkaoui, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/308138.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    defects
    dielectrics
    high-k
    metal oxide semiconductor
    Opis:
    The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission electron microscopy (TEM). From measurements of thermally stimulated current (TSC), electron states were found in the transition region of the HfO2/SiOx structures, exhibiting instability attributed to the flexible structural molecular network expected to surround the trap volumes. The investigations were focused especially on whether the trap states belong to an agglomeration consisting of a single charge polarity or of a dipole constellation. We found that flat-band voltage shifts of MOS structures, that reach constant values for increasing oxide thickness, cannot be taken as unique evidence for the existence of dipole layers.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 10-19
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Domains Stimulated Magnetostatic Coupling in NiFe/Au/Co/Au Multilayers Investigated by Complementary Methods
    Autorzy:
    Stobiecki, F.
    Urbaniak, M.
    Szymański, B.
    Kuświk, P.
    Schmidt, M.
    Aleksiejew, J.
    Weis, T.
    Engel, D.
    Lengemann, D.
    Ehresmann, A.
    Kopcewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810577.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    75.30.Gw
    75.60.-d
    Opis:
    The magnetic structure of $Ni_{80}Fe_{20}$/Au/Co/Au multilayers characterized by easy-plane and easy-axis perpendicular to the sample plane anisotropies for NiFe and Co, respectively, is strongly modified by magnetostatic coupling resulting from stray fields of stripe domains in the Co layers. Using complementary methods it will be shown that the magnetostatic coupling increases with decreasing Au spacer thickness, with the weakening of the easy plane anisotropy of the NiFe layers and with increasing thickness of the Co layers.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 345-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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