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    Wyświetlanie 1-4 z 4
    Tytuł:
    Numerical model of a semiconductor disk laser
    Autorzy:
    Sokół, A. K.
    Sarzała, R. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/174528.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    semiconductor disk laser
    SDL
    vertical-external-cavity surface-emitting laser
    VECSEL
    computer simulation
    numerical modelling
    Opis:
    In this paper we describe the numerical model of a semiconductor disk laser, developed and implemented in the Photonics Group, Institute of Physics, Lodz University of Technology, Poland. It consists of four strongly interrelated components for: carrier transport, heat flow, material gain and optical phenomena calculations. Combination of these components gives the steady-state self-consistent model which enables a simulation of various aspects of a semiconductor disk laser operation. A numerical analysis of carrier and power losses within the active region of 1.3-μm GaInNAs/GaAs semiconductor disk laser has been carried out using this model.
    Źródło:
    Optica Applicata; 2016, 46, 2; 199-211
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Pumping Beam Width on VECSEL Output Power
    Autorzy:
    Sokół, A. K.
    Sarzała, R. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/226018.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    VECSEL
    SDL
    semiconductor disk laser
    simulation
    numerical modeling
    power scaling
    Opis:
    The paper is devoted to a numerical analysis of an influence of a pumping beam diameter on output power of optically pumped vertical-external-cavity surface-emitting lasers. Simulations have been carried out for a structure with a GaInNAs/GaAs active region operating at 1.32 μm. Various assembly configurations have been considered. Results obtained show that laser power scaling is strongly affected by thermal properties of the device.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 3; 239-245
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    How to enhance a room-temperature operation of diode lasers and their arrays
    Autorzy:
    Sarzała, R. P.
    Sokół, A. K.
    Kuc, M.
    Nakwaski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/174004.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    diode laser
    thermal management
    thermal crosstalk
    semiconductor arrays
    Opis:
    A key problem to be solved during designing productive diode lasers and their lasing arrays is their proper thermal management enabling efficient high-power operation. Strictly speaking, the above demand leads to optimization of their structures to enhance lasing performance for high operation currents. It is well-known that deterioration of laser performance is mostly induced by excessive temperature increases within their volumes. In diode-laser arrays, additionally thermal crosstalk between array emitters should be taken into account. In the present paper, physics of heat-flux generation within the laser-diode volume and its extraction from it is analysed and described with the aid of our self-consistent simulation procedure. Then their thermal optimization is discussed including a proper design of a heat-flux generation within the laser volume, enhancement of its transport towards a laser heat-sink and, additionally in laser arrays, reduction of a thermal crosstalk between individual array emitters. The analysis is carried out using modern nitride edge-emitting ridge-waveguide lasers and their one-dimensional arrays as well as arsenide semiconductor disk lasers as typical examples of modern diode-laser designs. Physical processes responsible for heat-flux generation within these devices and heat-flux extraction from their volumes are analysed and an impact of some construction details on these processes is explained.
    Źródło:
    Optica Applicata; 2016, 46, 2; 213-226
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ITO layer as an optical confinement for nitride edge-emitting lasers
    Autorzy:
    Kuc, M.
    Sokół, A. K.
    Piskorski, Ł.
    Dems, M.
    Wasiak, M.
    Sarzała, R. P.
    Czyszanowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/200863.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    edge-emitting lasers
    InGaN/GaN
    computer simulation
    ITO
    optical confinement
    Opis:
    This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 147-154
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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