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    Wyświetlanie 1-8 z 8
    Tytuł:
    Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagala, J.
    Wosinski, T.
    Figielski, T.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195381.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.30.Gw
    73.50.Jt
    85.75.-d
    Opis:
    High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1121-1124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
    Autorzy:
    Sadowski, J.
    Grodzicka, E.
    Dynowska, E.
    Adamczewska, J.
    Domagała, J.
    Przedpelski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968416.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.14.Hg
    81.15.Gh
    Opis:
    We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF$\text{}_{2}$(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10$\text{}^{19}$ cm$\text{}^{-3}$ to 10$\text{}^{2 1}$ cm$\text{}^{-3}$ depending on the MBE process parameters.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 967-970
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of GaMnAs(100) Films
    Autorzy:
    Sadowski, J.
    Domagała, J.
    Bąk- Misiuk, J.
    Świątek, K.
    Kanski, J.
    Ilver, L.
    Oscarsson, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992165.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    79.60.Bm
    71.55.Eq
    Opis:
    We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 509-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices
    Autorzy:
    Sadowski, J.
    Mathieu, R.
    Svedlindh, P.
    Kanski, J.
    Karlsteen, M.
    Świątek, K.
    Domagała, J. Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035614.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.+a
    75.50.Pp
    75.25.+z
    Opis:
    We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12Å or 24Å). The non-magnetic InGaAs spacer layers are 12Å thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 687-694
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
    Autorzy:
    Yastrubchak, O.
    Kulik, M.
    Żuk, J.
    Domagała, J.
    Szymczak, R.
    Wosiński, T.
    Sadowski, J.
    Tóth, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812027.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    78.30.Fs
    Opis:
    We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1445-1450
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagała, J.
    Sadowski, J.
    Kowalczyk, L.
    Szot, M.
    Figielski, T.
    Wosiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160667.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    61.05.cp
    78.20.Ls
    73.50.Jt
    75.30.Gw
    Opis:
    Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-90-A-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
    Autorzy:
    Sadowski, J.
    Kanski, J.
    Adell, M.
    Domagała, J. Z.
    Janik, E.
    Łusakowska, E.
    Brucas, R.
    Hanson, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044534.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Jt
    81.15.Hi
    68.65.Hb
    68.37.Ps
    Opis:
    We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 851-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of High-Temperature-Grown GaMnSb/GaSb
    Autorzy:
    Romanowski, P.
    Bak-Misiuk, J.
    Dynowska, E.
    Domagala, J.
    Sadowski, J.
    Wojciechowski, T.
    Barcz, A.
    Jakiela, R.
    Caliebe, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539009.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.37.Hk
    68.49.Sf
    68.55.ag
    68.55.Ln
    Opis:
    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 341-343
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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