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    Wyświetlanie 1-14 z 14
    Tytuł:
    Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
    Autorzy:
    Juszyński, P.
    Wasik, D.
    Gryglas-Borysiewicz, M.
    Przybytek, J.
    Szczytko, J.
    Twardowski, A.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403622.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.47.-m
    Opis:
    Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1004-1006
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Observation of Vacancies in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As with Positron Annihilation Spectroscopy
    Autorzy:
    Tuomisto, F.
    Slotte, J.
    Saarinen, K.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036028.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ji
    75.50.Pp
    78.70.Bj
    Opis:
    Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As$\text{}_{2}$ partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As$\text{}_{2}$ partial pressure.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 601-606
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagala, J.
    Wosinski, T.
    Figielski, T.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195381.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.30.Gw
    73.50.Jt
    85.75.-d
    Opis:
    High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1121-1124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
    Autorzy:
    Figielski, T.
    Wosiński, T.
    Pelya, O.
    Sadowski, J.
    Morawski, A.
    Mąkosa, A.
    Dobrowolski, W.
    Jagielski, J.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035752.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.63.-b
    75.60.-d
    73.20.Fz
    Opis:
    We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 525-531
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices
    Autorzy:
    Wesela, W.
    Wosiński, T.
    Mąkosa, A.
    Figielski, T.
    Sadowski, J.
    Terki, F.
    Charar, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047701.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    75.50.Pp
    75.30.Gw
    85.75.-d
    Opis:
    The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 369-373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
    Autorzy:
    Yastrubchak, O.
    Kulik, M.
    Żuk, J.
    Domagała, J.
    Szymczak, R.
    Wosiński, T.
    Sadowski, J.
    Tóth, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812027.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    78.30.Fs
    Opis:
    We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1445-1450
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
    Autorzy:
    Andrearczyk, T.
    Wosiński, T.
    Figielski, T.
    Mąkosa, A.
    Tkaczyk, Z.
    Łusakowska, E.
    Wróbel, J.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811912.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    75.50.Pp
    75.30.Gw
    75.60.Ch
    Opis:
    We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1049-1054
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Resonance Studies of the Origin of Ferromagnetism in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
    Autorzy:
    Fedorych, O. M.
    Wilamowski, Z.
    Potemski, M.
    Byszewski, M.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036029.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    76.30.Fc
    75.50.Pp
    75.30.Gw
    Opis:
    Different types of magnetic resonance observed in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As reflect three different magnetic phases: para-, ferro-, and ferrimagnetic. Ferromagnet is characterized by single isotropic resonance line. A complex spectrum in ferrimagnet can be described by g factor equal to 1.44 and a sum of an axial and cubic anisotropy field. The axial field is by an order of magnitude greater than the cubic one. The complex structure of ferrimagnetic resonance is attributed to spin-wave resonance. Quantitative analysis of the dispersion of spin wave shows that the range of exchange coupling is very long, of the order of 25 nm, while spin-wave stiffness and the total exchange field are very small. The exchange field as evaluated from spin wave is by two orders of magnitude smaller than the Zener field corresponding to the critical temperature.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 607-612
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
    Autorzy:
    Šustavičiūtė, R.
    Balakauskas, S.
    Adomavičius, R.
    Krotkus, A.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047687.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.65.Re
    07.57.Hm
    78.47.+p
    75.50.Pp
    Opis:
    An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 311-314
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
    Autorzy:
    Andrearczyk, T.
    Wosiński, T.
    Mąkosa, A.
    Figielski, T.
    Wróbel, J.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791342.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    75.50.Pp
    75.30.Gw
    75.60.Ch
    85.75.-d
    Opis:
    We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 901-903
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Off-Axis Electron Holography of Magnetic Nanostructures: Magnetic Behavior of Mn Rich Nanoprecipitates in (Mn,Ga)As System
    Autorzy:
    Barańska, M.
    Dłużewski, P.
    Kret, S.
    Morawiec, K.
    Li, Tian
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033003.pdf
    Data publikacji:
    2017-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.jp
    68.37.Lp
    07.05.Pj
    75.50.Pp
    Opis:
    The Lorentz off-axis electron holography technique is applied to study the magnetic nature of Mn rich nanoprecipitates in (Mn,Ga)As system. The effectiveness of this technique is demonstrated in detection of the magnetic field even for small nanocrystals having an average size down to 20 nm.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 5; 1406-1408
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    XANES Studies of Mn K and $L_{3,2}$ Edges in the (Ga,Mn)As Layers Modified, by High Temperature Annealing
    Autorzy:
    Wolska, A.
    Lawniczak-Jablonska, K.
    Klepka, M.
    Jakieła, R.
    Demchenko, I.
    Sadowski, J.
    Holub-Krappe, E.
    Persson, A.
    Arvanitis, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812244.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Dm
    75.50.Pp
    Opis:
    $Ga_{1-x}Mn_xAs$ is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper $Ga_{1-x}Mn_xAs$ samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure around the Mn atoms relating to the cluster formation. The changes in the electronic structure of the Mn, Ga and As atoms in the (Ga,Mn)As layers after high temperature annealing were determined by X-ray absorption near edge spectroscopy. The experimental spectra were compared with the predictions of ab initio full multiple scattering theory using the FEFF 8.4 code. The nominal concentration of the Mn atoms in the investigated samples was 6% and 8%. We do not observe changes in the electronic structure of Ga and As introduced by the presence of the Mn atoms. We find, in contrast, considerable changes in the electronic structure around the Mn atoms. Moreover, for the first time it was possible to indicate the preferred interstitial positions of the Mn atoms.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 357-366
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagała, J.
    Sadowski, J.
    Kowalczyk, L.
    Szot, M.
    Figielski, T.
    Wosiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160667.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    61.05.cp
    78.20.Ls
    73.50.Jt
    75.30.Gw
    Opis:
    Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-90-A-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
    Autorzy:
    Gutowski, M.
    Stefanowicz, W.
    Proselkov, O.
    Sawicki, M.
    Żuberek, R.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1428597.pdf
    Data publikacji:
    2012-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.05.Kf
    68.47.Fg
    75.30.Gw
    75.50.Pp
    75.70.-i
    75.70.Ak
    75.70.Cn
    75.70.Rf
    76.50.+g
    Opis:
    In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from $[\overline{1}10]$ to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, $H_{eff}$ (=4π $M-H_{2⊥}$), $H_{2∥},$ and $H_{4∥}$. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 5-6; 1228-1230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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