- Tytuł:
- On the Pinning of the Fermi Level by Germanium A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ Deep Donor State in GaAs Codoped with Ge and Te
- Autorzy:
-
Słupiński, T.
Nowak, G.
Przybytek, J.
Stępniewski, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1929765.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 72.20.Jv
- Opis:
- We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A$\text{}_{1}$ localized electronic state of Ge$\text{}_{Ga}$ impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A$\text{}_{1}^{0}\text{}^{/}\text{}^{+}$ level, at ambient pressure, was observed by pressure dependent Hall effect measurements.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 807-811
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł