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    Wyświetlanie 1-9 z 9
    Tytuł:
    Controlling the biexciton-exciton cascade kinetics in a quantum dot via coupling to a microcavity optical mode
    Autorzy:
    Sęk, G.
    Krizhanovskii, D.
    Kulakovskii, V.
    Reitzenstein, S.
    Kamp, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160147.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.-m
    42.50.Pq
    Opis:
    The luminescence of single and two exciton states in a quantum dot embedded in the active layer of a micropillar cavity has been investigated. Temperature tuning has been used to bring the energy states of the quantum dot and the cavity into resonance. Studying the resonance behavior of the exciton and biexciton transitions with cavity mode revealed a similar Purcell effect for both lines. The cavity-induced changes of the respective radiative lifetimes have been shown to allow for controlling the ratio between the single and two exciton occupation and their relative emission rates in a single quantum dot.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-44-A-47
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes
    Autorzy:
    Mrowiński, P.
    Musiał, A.
    Sęk, G.
    Misiewicz, J.
    Höfling, S.
    Somers, A.
    Hein, S.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399087.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    71.70.Gm
    78.67.Hc
    73.21.-b
    81.07.Ta
    Opis:
    The influence of confinement potential anisotropy on emission properties of strongly elongated single InAs/InGaAlAs/InP quantum dashes has been investigated by polarization-resolved microphotoluminescence spectroscopy at around 1.5 μm. There have been determined the exciton fine structure splitting, degree of linear polarization of surface emission and biexciton binding energy. The investigated dashes exhibited usually: the exciton anisotropy splitting larger than 100 μeV, the corresponding biexciton binding energy of about 3 meV, and the degree of linear polarization values in the range from 24% to 55%. Here, we presented a correlation of these parameters for several quantum dashes, which can be attributed either to a change in lateral aspect ratio within the ensemble, or the carrier localization on random fluctuations of the dash confinement potential.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 801-804
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties
    Autorzy:
    Mrowiński, P.
    Dusanowski, Ł.
    Somers, A.
    Höfling, S.
    Reithmaier, J.
    Misiewicz, J.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033861.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    photoluminescence
    quantum dash
    excitonic complexes
    antibunching
    autocorrelation
    single photon source
    telecommunication
    time-resolved
    Opis:
    In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 382-386
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
    Autorzy:
    Musiał, A.
    Sęk, G.
    Maryński, A.
    Podemski, P.
    Misiewicz, J.
    Löffler, A.
    Höfling, S.
    Reitzenstein, S.
    Reithmaier, J.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492876.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    65.80.-g
    Opis:
    Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 883-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimizing the InGaAs/GaAs quantum dots for 1.3 μm emission
    Autorzy:
    Maryński, A.
    Mrowiński, P.
    Ryczko, K.
    Podemski, P.
    Gawarecki, K.
    Musiał, A.
    Misiewicz, J.
    Quandt, D.
    Strittmatter, A.
    Rodt, S.
    Reitzenstein, S.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055140.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.-n
    78.67.Hc
    73.22.-f
    Opis:
    Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 386-390
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure
    Autorzy:
    Dyksik, M.
    Motyka, M.
    Rygała, M.
    Pfenning, A.
    Hartmann, F.
    Weih, R.
    Worschech, L.
    Höfling, S.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1835778.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    resonant tunneling diode
    quantum well
    optical spectroscopy
    photoluminescence
    photoreflectance
    Opis:
    We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.
    Źródło:
    Optica Applicata; 2021, 51, 2; 171-180
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
    Autorzy:
    Syperek, M.
    Ryczko, K.
    Dallner, M.
    Dyksik, M.
    Motyka, M.
    Kamp, M.
    Höfling, S.
    Misiewicz, J.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398579.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    78.47.D-
    78.30.Fs
    78.47.jg
    78.55.Cr
    78.67.De
    Opis:
    Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1224-1228
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
    Autorzy:
    Pieczarka, M.
    Podemski, P.
    Musiał, A.
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Langer, F.
    Höfling, S.
    Kamp, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399094.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    78.67.-n
    78.67.Pt
    Opis:
    Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 817-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
    Autorzy:
    Mrowiński, P.
    Tarnowski, K.
    Olszewski, J.
    Somers, A.
    Kamp, M.
    Höfling, S.
    Reithmaier, J.
    Urbańczyk, W.
    Misiewicz, J.
    Machnikowski, P.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1159588.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.-m
    Opis:
    Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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