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    Wyświetlanie 1-5 z 5
    Tytuł:
    Lateral Coupling within the Ensemble of InAs/InGaAlAs/InP Quantum Dashes
    Autorzy:
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399089.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Hb
    78.67.Uh
    Opis:
    In this work we investigate the electronic structure of coupled quantum dashes. The respective confined state energy levels are calculated for various cross-sectional shapes and sizes of the dashes and in function of the lateral distance between them. The results are confronted with the existing experimental data on the optical transitions in such structures. It has been concluded that for realistic system parameters (geometry and spatial in-plane separation) the obtained direct coupling is weak and in most of the applications the dashes can be considered individually, as long as the ensemble is strongly inhomegeneous.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 805-808
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Built-in Electric Field on Forbidden Transitions in In_xGa$\text{}_{1-x}$As/GaAs Double Quantum Well by Three-Beam Photoreflectance
    Autorzy:
    Sęk, G.
    Ryczko, K.
    Misiewicz, J.
    Bayer, M.
    Wang, T.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2028844.pdf
    Data publikacji:
    2001-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.-r
    78.66.-w
    Opis:
    Photoreflectance spectroscopy has been used to study optical transitions in In$\text{}_{0.045}$Ga$\text{}_{0.955}$As/GaAs double quantum well at 80 K. The derivative nature of this contactless electromodulation technique allows for the observation of excited state transitions in the low-dimensional structure including the symmetry-forbidden ones. Excitonic symmetry-forbidden transitions can be observed due to the effect of mixing of heavy and light hole excitons and/or due to some asymmetry in the structure. We have shown that the built-in electric field in the region of double quantum well is weak enough (less than 0.5 kV/cm) not to cause any significant energetic shift of features due to quantum confined Stark effect, on one hand. On the other hand, it is sufficient to change strongly the oscillator strength of forbidden transitions. To change the internal electric field, we have used photoreflectance in the three-beam mode with a third beam continuously illuminating the sample and causing changes of the built-in electric fields due to the photovoltage effect. This method works as a contactless forward bias and allows for a change of the field down to the flat band conditions. We have shown that changes of built-in electric field by amount of a few tenths of kV/cm can modify the intensity of forbidden transitions significantly. We show that, although the mixing of excitons is still important, a very weak built-in electric field can be dominant in the observation of forbidden excitonic transitions in double quantum well.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 3; 417-424
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
    Autorzy:
    Syperek, M.
    Ryczko, K.
    Dallner, M.
    Dyksik, M.
    Motyka, M.
    Kamp, M.
    Höfling, S.
    Misiewicz, J.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398579.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    78.47.D-
    78.30.Fs
    78.47.jg
    78.55.Cr
    78.67.De
    Opis:
    Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1224-1228
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
    Autorzy:
    Pieczarka, M.
    Podemski, P.
    Musiał, A.
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Langer, F.
    Höfling, S.
    Kamp, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399094.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    78.67.-n
    78.67.Pt
    Opis:
    Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 817-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimizing the InGaAs/GaAs quantum dots for 1.3 μm emission
    Autorzy:
    Maryński, A.
    Mrowiński, P.
    Ryczko, K.
    Podemski, P.
    Gawarecki, K.
    Musiał, A.
    Misiewicz, J.
    Quandt, D.
    Strittmatter, A.
    Rodt, S.
    Reitzenstein, S.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055140.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.-n
    78.67.Hc
    73.22.-f
    Opis:
    Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 386-390
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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