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Wyszukujesz frazę "Kulik, M.A." wg kryterium: Autor

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Nuclear and Optical Analyses of MOS Devices
    Autorzy:
    Rzodkiewicz, W.
    Kulik, M.
    Panas, A.
    Kobzev, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400446.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.80.Yc
    78.20.Ci
    07.60.Fs
    85.30.-z
    Opis:
    The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 851-853
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods
    Autorzy:
    Rzodkiewicz, W.
    Kulik, M.
    Papis, E.
    Szerling, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807507.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    64.60.-f
    71.20.-b
    Opis:
    Optical spectra analysis provides a wealth of information on physical properties of various semiconductor materials. Fractional derivative spectrum technique is especially interesting when the limitations of the standard treatment occur. In this paper we present the fractional derivative spectrum method for analysis of the optical spectra for both Si and GaAs. The significant changes in critical point parameters in each treated Si and GaAs samples in comparison to that before treatment have been observed. Our investigation illustrates that fractional derivative spectrum is a very good technique to extract basic information on relevant physical quantities from the observed optical spectra, and it has the advantages of flexibility, directness, and sensitivity, which give possibility to obtain the Van Hove singularities (critical point parameters) efficiently with one consent.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-95-S-98
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dielectric Function of Native Oxide on Ion-Implanted GaAs
    Autorzy:
    Kulik, M.
    Rzodkiewicz, W.
    Gluba, Ł.
    Kobzev, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400489.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.20.Ci
    78.20.-e
    Opis:
    The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with $Ne^{+}$, $Al^{+}$, $Ar^{+}$, or $In^{+}$ ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of $1 \times 10^{16} cm^{-2}$ at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 956-959
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions
    Autorzy:
    Rzodkiewicz, W.
    Kulik, M.
    Pyszniak, K.
    Kobzev, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807545.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Qn
    82.80.Yc
    Opis:
    The semi-isolating GaAs (100) samples irradiated with fluence 3 × $10^{15}$ ions/$cm^{2}$ of $In^{+}$ ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-129-S-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of N₂⁺ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs
    Autorzy:
    Kulik, M.
    Surowiec, Z.
    Rzodkiewicz, W.
    Filiks, J.
    Drozdziel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402234.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.68.+m
    79.20.Rf
    Opis:
    The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion beam; then, the samples were thermally annealed at temperatures of 500, 700, and 900°C for 2 h in an argon gas flow. The surface roughness of implanted samples was investigated with the help of atomic force microscopy. Numerous hillocks, which caused a significant increase in surface roughness, were observed. The spectroscopic ellipsometry method was used for determination of pseudo-dielectric functions of the near-surface layers in the investigated samples and the thickness of native oxides covering the irradiated surface. It was observed that the shapes of disorder spectra of the dielectric functions of near-surface layers of implanted GaAs partly returned to their original state after the thermal annealing.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 918-922
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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