- Tytuł:
- Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
- Autorzy:
-
Krynicki, J.
Warchoł, S.
Rzewuski, H.
Groetzschel, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1932091.pdf
- Data publikacji:
- 1995-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 61.80.Jh
- Opis:
- Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 1; 249-252
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł