Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Rogalski, L" wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Doing Hirsch proud; shaping H-index in engineering sciences
Autorzy:
Czarnecki, L.
Kaźmierkowski, M.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/202004.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
bibliometric indicators
citations
citation metrics
h-index
country rank
SCImago indicator
disciplines
domestic Engineering sub-disciplines
statistics
Opis:
The h-index concept has been analysed in aspects of a contemporary tendency of parameterisation of everything and as the potential measure of the knowledge progress, which recognises individuals, institutions and Engineering sub-disciplines that best generate new knowledge. Considerations have been presented at the level of universality of knowledge which implies permanent progress and on the base of careful thoughts of the domestic experience. The h-nature of things has been described, and several axiomatic characterisations of the Hirsch index have been gathered. The mechanism how to increase the h-index has been presented. Some similarities between h-index and the journal impact factor (JIF) have been stressed. Also the universal role of H-index in ranking countries in all areas and in Engineering has been exampled in extended tables. The Glänzel’s model which connects the h-index with two fundamental scientometric indicators: number of publications and the rate of citation, has been analysed. Following the Microsoft Academic Search, the lists of 15 top scientists from various academic disciplines and separately in Engineering have been composed. It has been found that the population of the best keeps basically the same relations between the h-index and a number of publication, and between the h-index and a citation number. However, even the best in Engineering should publish 2 times a year or more papers to receive the same h-index as top scientists in overall domains. The h-index distribution of domestic Engineering sub-disciplines has been presented and analysed in statistic categories. The suitable hhistograms and the cumulative probability density function (CPDF) have been elaborated for 21 sub-disciplines and thereupon the Engineering sub-disciplines have been arranged into three clusters. It has been demonstrated that Engineering as the whole and Engineering sub-disciplines are underestimated, compared to other academic disciplines. The adequate normalisation factors have been suggested. Several other conclusions considered the h,H-indices as the measure of the knowledge progress addressed to individual researchers and to collective, e.g., journals, institutions, organisations, countries, adequately have been written. The h,H-indices are the general measure of the position of the given subject (person or organisation) but cannot be universal.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 5-21
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:
Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through two step passivation technique
Autorzy:
Michalczewski, K.
Ivaldi, F.
Kubiszyn, Ł.
Benyahia, D.
Boguski, J.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1055156.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
73.25.+i
82.45.Cc
Opis:
We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 325-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies