- Tytuł:
- Defect Transformations in Ion Bombarded InGaAsP
- Autorzy:
-
Ratajczak, R.
Turos, A.
Stonert, A.
Nowicki, L.
Strupiński, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1504046.pdf
- Data publikacji:
- 2011-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e - Opis:
- Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 1; 136-139
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł