Autor: Szerling, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements
Autorzy:: Pluska, M.
Czerwinski, A.
Szerling, A.
Ratajczak, J.
Kątcki, J.
Powiązania:: https://bibliotekanauki.pl/articles/1198425.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Hk
85.30.De
61.72.-y
68.37.Hk
Opis:: Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1027-1032
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current
Autorzy:: Pluska, M.
Czerwinski, A.
Ratajczak, J.
Szerling, A.
Kątcki, J.
Powiązania:: https://bibliotekanauki.pl/articles/1807514.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Hk
85.30.De
61.72.-y
Opis:: The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-86-S-88
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Oval defects in crystals grown by MBE technique: study and methods of elimination abstract
Autorzy:: Szerling, A.
Kosiel, K.
Płuska, M.
Ochalski, T. J.
Ratajczak, J.
Powiązania:: https://bibliotekanauki.pl/articles/378453.pdf
Data publikacji:: 2004
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:: The paper is devoted to a group of macroscopic defects which may be found in epitaxial A³ B⁵ materials grown by MBE technique. Morphology, geometry and optical properties of defects were studied by means of several experimental methods. The experimental data have been compared with the information taken from literature concerning sources of the defects and causes of their appearance.
Źródło:: Electron Technology : Internet Journal; 2004, 36, 6; 1-5
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

Artykuł

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