Autor: Leszczyński, R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Polarity Related Problems in Growth of GaN Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E.
Powiązania:: https://bibliotekanauki.pl/articles/1991873.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
65.70.+y
Opis:: Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 427-430
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Autorzy:: Godlewski, M.
Ivanov, V. Yu.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036870.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 689-694
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Autorzy:: Godlewski, M.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Wisniewski, P.
Suski, T.
Bockowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035593.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 627-632
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
Autorzy:: Grzegory, I.
Boćkowski, M.
Krukowski, S.
Łucznik, B.
Wróblewski, M.
Weyher, J.
Leszczyński, M.
Prystawko, P.
Czernecki, R.
Lehnert, J.
Nowak, G.
Perlin, P.
Teisseyre, H.
Purgał, W.
Krupczyński, W.
Suski, T.
Dmowski, L.
Litwin-Staszewska, E.
Skierbiszewski, C.
Łepkowski, S.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2030423.pdf
Data publikacji:: 2001-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Opis:: In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
Źródło:: Acta Physica Polonica A; 2001, 100, Supplement; 229-232
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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