Autor: Prasad, S.K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Artykuł

Skocz do pozycji: 2.

Tytuł:: Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study
Autorzy:: Prasad, K.
Das, Chandasree
Rukmani, K.
Asokan, S.
Powiązania:: https://bibliotekanauki.pl/articles/1400510.pdf
Data publikacji:: 2015-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ng
Opis:: The variation of normalized electrical resistivity in the system of glasses $Ge_{15}Te_{85-x}Sn_{x}$ with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.
Źródło:: Acta Physica Polonica A; 2015, 127, 6; 1666-1671
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja