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    Wyświetlanie 1-7 z 7
    Tytuł:
    Simulation of the magnetostrictive actuator transients
    Autorzy:
    Idziak, P.
    Kowalski, K.
    Nowak, L.
    Barlak, M.
    Pochrybniak, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/377166.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
    Tematy:
    actuators
    magnetostriction
    electromagnetic field
    transient analysis
    Opis:
    The paper deals with a magnetostrictive fast-acting actuator applied as a driving device for plasma valve. The actuator is characterized by a relatively small displacement (les then 0.1 mm), but with a very short response time – below 0.1 ms. System is designed for so called “high intensity plasma pulses gun” which is applied in the area of plasma physics and material engineering [1]. A structure with an axisymmetrical actuator energised by discharged pulses of a capacitor has been proposed. The field-circuit mathematical model of the dynamic operation of the actuator has been applied. The model includes: the equation of transient electromagnetic field in a non-linear ferromagnetic material and equation of electric circuit. Using the Borland Delphi 9.0 environment, the computer software has been elaborated. Results of simulation are presented.
    Źródło:
    Poznan University of Technology Academic Journals. Electrical Engineering; 2015, 83; 23-30
    1897-0737
    Pojawia się w:
    Poznan University of Technology Academic Journals. Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enrichment of AISI 316L Steel Surface Layer with Rare Earth Elements Using Ion Beams
    Autorzy:
    Sartowska, B.
    Waliś, L.
    Starosta, W.
    Barlak, M.
    Pochrybniak, C.
    Kowalska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400431.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.77.Dq
    52.77.-j
    72.15.Eb
    81.65.-b
    Opis:
    Enrichment of AISI 316L steel surface layers with rare earth elements was carried out using two methods with ion beam applying. The first one was the ion implantation with the doses in the range of $1 \times 10^{15} cm^{-2}$ up to $5 \times 10^{17} cm^{-2}$ where mishmetal (Ce+La) was used as the ion source. The second method was the high intensity pulsed plasma beams. The plasma pulses contained both ions/atoms of Ce+La from the electrodes material (mishmetal). The pulse energy densities $(3 J/cm^2)$ were sufficient to melt the near surface layer of the steel and introduce those elements into the surface layer. The aim of this work was to investigate the changes of stainless steel surface properties (morphology, rare earth elements concentration, presence of identified phases) after the rare earth elements addition with or without melting. Scanning electron microscopy, energy dispersion spectroscopy, and X-ray diffraction analysis were used for initial and modified surface characterisation. Grazing-incidence X-ray diffraction shows differences in the identified phase presence in the modified surface layer connected with the modification method.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 822-824
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
    Autorzy:
    Ratajczak, R.
    Werner, Z.
    Barlak, M.
    Pochrybniak, C.
    Stonert, A.
    Zhao, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402209.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 845-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Composition of Scales Formed on AISI 316 L Steel Alloyed with Ce/La Using High Intensity Plasma Pulses after Oxidation in 1000°C
    Autorzy:
    Sartowska, B.
    Piekoszewski, J.
    Waliś, L.
    Barlak, M.
    Starosta, W.
    Pochrybniak, C.
    Bocheńska, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503944.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.77.-j
    72.15.Eb
    81.65.Mq
    Opis:
    It is well documented that the high oxygen affinity elements such as Y, Ce, La, Er and other rare earth elements added to steel in small amounts can improve their high temperature oxidation resistance. Rare earth elements can be either alloyed during the steel making process or introduced through surface treatment techniques. Improvement of high temperature oxidation resistance of AISI 316 L steel by incorporation Ce and La elements into its near surface region using high intensity pulsed plasma beams in so-called deposition by the pulse erosion mode was investigated in the present work. The samples were irradiated with 3 short (μs scale) intense (energy density $3 J//cm^2$) plasma pulses. Heating and cooling processes occur under non-equilibrium conditions. In all samples the near surface layer of the thickness in μm range was melted and simultaneously doped with cerium and lanthanum. The modified samples were oxidized at 1000°C for 100 h in air. The obtained effects were: oxide scales formed on the treated samples were more fine-grained, compact and adhering better that those formed on the un-treated samples.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 83-86
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
    Autorzy:
    Werner, Z.
    Pochrybniak, C.
    Barlak, M.
    Piekoszewski, J.
    Korman, A.
    Heller, R.
    Szymczyk, W.
    Bocheńska, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/147018.pdf
    Data publikacji:
    2011
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    dilute magnetic semiconductors (DMS)
    Mn-implanted Si
    ion beam induced epitaxial crystallization
    Opis:
    Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
    Źródło:
    Nukleonika; 2011, 56, 1; 5-8
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Wettability of carbon and silicon carbide ceramics induced by their surface alloying with Zr and Cu elements using high intensity pulsed plasma beams
    Autorzy:
    Barlak, M.
    Piekoszewski, J.
    Sartowska, B.
    Waliś, L.
    Starosta, W.
    Kierzek, J.
    Pochrybniak, C.
    Kowalska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/146789.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    wettability
    ceramic-metal joints
    high intensity pulsed plasma beams (HIPPB)
    Opis:
    Joining of metals with ceramics is very difficult, because properties of these materials are very different. One of the methods of improving mechanical strength of the obtained joints is the introduction of an additional interlayer to the joining area. This paper presents the Zr and Cu-rich layers in C and SiC substrates obtained using the high intensity pulsed plasma beams method. The results of Zr plasma modifications were beneficial and similar to the results obtained in previous works with Ti. The measured contact angles were below 90 centigrade. The results with Cu plasma were unfavourable with contact angles close to 180 centigrade. Apart from the sessile-drop test and to extend the range of analysis, the investigated samples were examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), grazing angle X-ray diffraction (GXRD), and Rutherford back scattering (RBS) measurements.
    Źródło:
    Nukleonika; 2012, 57, 4; 477-483
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High - temperature oxidation resistance in yttrium implanted stainless steel
    Autorzy:
    Barlak, M.
    Piekoszewski, J.
    Werner, Z.
    Sartowska, B.
    Waliś, L.
    Starosta, W.
    Kierzek, J.
    Kowalska, E.
    Wilhelm, R. A.
    Pochrybniak, C.
    Woźnica, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/146785.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    high-temperature oxidation resistance
    ion implantation
    yttrium
    Opis:
    Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.
    Źródło:
    Nukleonika; 2012, 57, 4; 473-476
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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