- Tytuł:
- Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
- Autorzy:
-
Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2048120.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh - Opis:
- Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł