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    Wyświetlanie 1-11 z 11
    Tytuł:
    Gas Sensors Based on ZnO Structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399403.pdf
    Data publikacji:
    2013-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.25.-p
    42.82.Et
    68.35.Ct
    Opis:
    The paper presents the results of investigations concerning sensor structures based on porous layers of zinc oxide (ZnO) sensitive to a selected gaseous environment. The investigations comprised analyses of the influence of the gaseous environment on the optical properties of a sensor structure, in particularly on the change of the spectral characteristics of optical transmission within the range of ultraviolet light and in the visible range. These presented investigations were carried out in such a gaseous environment as nitrogen dioxide $NO_2$ in synthetic air.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 3; 567-569
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/200967.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ZnO
    semiconductor
    gas sensors
    Zno
    czujniki gazu
    półprzewodnik
    Opis:
    The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 4; 829-836
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Zinc Oxide Semiconductor for Photonics Structures Applications
    Autorzy:
    Struk, P.
    Pustelny, T.
    Pustelny, B.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Borysiewicz, M.
    Ekielski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506857.pdf
    Data publikacji:
    2010-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.70.-a
    42.82.-m
    68.35.Ct
    Opis:
    The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 6; 1242-1245
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Materials Technology for GaSb-Based optoelectronic Devices
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Piotrowski, T. T.
    Piskorski, M.
    Guziewicz, M.
    Papis, E.
    Gołaszewska-Malec, K.
    Kasjuniuk, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952070.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    81.05.Ea
    81.40.-z
    Opis:
    A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 903-906
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Kamińska, E.
    Wojciechowski, T.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/220412.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Wide band gap oxide semiconductors
    ZnO
    integrated optics structures
    planar waveguides
    Opis:
    The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 401-412
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
    Autorzy:
    Taube, A.
    Guziewicz, M.
    Kosiel, K.
    Gołaszewska-Malec, K.
    Król, K.
    Kruszka, R.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/953063.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    aluminum oxide
    MOS
    silicon carbide
    4H-SiC
    high-K dielectrics
    tlenek glinu
    węglik krzemu
    dielektryki high-k
    Opis:
    The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Optical Waveguides for Application in Optoelectronic Gas Sensors
    Autorzy:
    Golaszewska, K.
    Kamińska, E.
    Pustelny, T.
    Struk, P.
    Piotrowski, T.
    Piotrowska, A.
    Ekielski, M.
    Kruszka, R.
    Wzorek, M.
    Borysiewicz, M.
    Pasternak, I.
    Gut, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811559.pdf
    Data publikacji:
    2008-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.82.Et
    07.07.Df
    42.79.Pw
    81.15.-z
    Opis:
    In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide $TiO_2$ and tin dioxide $SnO_2$ on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 6A; A-223-A-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Optical Waveguides Based on Thin ZnO Layers
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gut, K.
    Gołaszewska, K.
    Kamińska, E.
    Ekielski, M.
    Pasternak, I.
    Łusakowska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807757.pdf
    Data publikacji:
    2009-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.25.-p
    42.70.-a
    42.82.-m
    42.82.Et
    68.35.Ct
    Opis:
    The paper quotes the results of investigations concerning planar optical waveguides with a high value of the refractive index, achieved basing on a broad-band gap semiconductor ZnO, deposited on glass or quartz substrates. The investigations were focused on the properties of the waveguides, determining the modal characteristics, the attenuation coefficient and the structure of the surface.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 3; 414-418
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN
    Autorzy:
    Kamińska, E.
    Piotrowska, A.
    Jasiński, J.
    Kozubowski, J.
    Barcz, A.
    Gołaszewska, K.
    Bremser, M. D.
    Davis, R. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991549.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Cg
    73.40.Ns
    Opis:
    The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 383-386
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry
    Autorzy:
    Guziewicz, M.
    Jung, W.
    Grochowski, J.
    Borysiewicz, M.
    Golaszewska, K.
    Kruszka, R.
    Baranska, A.
    Piotrowska, A.
    Witkowski, B.
    Domagala, J.
    Gryzinski, M.
    Tyminska, K.
    Stonert, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492706.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Jc
    29.40.-n
    87.53.Bn
    Opis:
    Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using $\text{}^{137}Cs$ and $\text{}^{60}Co$ sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of $4.36 \times 10^{16} cm^{-3}$ to $2.86 \times 10^{16} cm^{-3}$ after $\text{}^{137}Cs γ$ irradiation with doses of 10 Gy. In the case of γ irradiation from $\text{}^{60}Co$ source, hole concentration of the film decreases from $6.3 \times 10^{16}//cm^3$ to $4.1 \times 10^{16}//cm^3$ and to $2.9 \times 10^{16}//cm^3$ after successive expositions with a dose of 20 Gy.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-069-A-072
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Detection by the Entire Channel of High Electron Mobility Transistors
    Autorzy:
    Sakowicz, M.
    Łusakowski, J.
    Karpierz, K.
    Knap, W.
    Grynberg, M.
    Köhler, K.
    Valusis, G.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811985.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.+a
    78.20.Ls
    85.30.Tv
    07.57.Kp
    Opis:
    GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1343-1348
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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