- Tytuł:
- Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
- Autorzy:
-
Teisseyre, H.
Perlin, P.
Leszczyński, M.
Suski, T.
Dmowski, L.
Grzegory, I.
Porowski, S.
Jun, J.
Moustakas, T. D. - Powiązania:
- https://bibliotekanauki.pl/articles/1873040.pdf
- Data publikacji:
- 1995-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
65.70.+y
78.50.Ge
78.66.Fd - Opis:
- Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 2; 403-406
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł