- Tytuł:
- Critical modeling issues of SiGe semiconductor devices
- Autorzy:
-
Palankovski, V.
Selberherr, S. - Powiązania:
- https://bibliotekanauki.pl/articles/308035.pdf
- Data publikacji:
- 2004
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SiGe HBT
numerical simulation
band gap
mobility
small-signal simulation
S-parameters - Opis:
- We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations of SiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2004, 1; 15-25
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł