Autor: Jantsch, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers
Autorzy:: Wilamowski, Z.
Jantsch, W.
Ostermayer, G.
Powiązania:: https://bibliotekanauki.pl/articles/1888154.pdf
Data publikacji:: 1991-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
71.55.-i
Opis:: The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
Źródło:: Acta Physica Polonica A; 1991, 80, 2; 283-286
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Consequences of Spatial Fluctuation of Coulomb Potential in AlGaAs with DX Centers
Autorzy:: Wilamowski, Z.
Kossut, J.
Jantsch, W.
Ostermayer, G.
Powiązania:: https://bibliotekanauki.pl/articles/1890983.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Dp
71.45.Jp
72.80.Ey
Opis:: Electric charges on randomly distributed impurities in semiconductors produce a spatially fluctuating potential. When the impurities are partially filled, their occupancy is not random but there appears a spatial correlation of the impurity charges appearing due to the inter-impurity Coulomb interactions. We show that when these interactions are taken into account then (i) the activation energy of the electron concentration, (ii) thermal emission kinetics, (iii) capture kinetics, (iv) persistent photoconductivity kinetics and (v) the electron mobility (in a steady state as well as during transients) in GaAlAs:Si can be explained in a consistent way. The energy diagram con cerning the DX center levels with respect to minima of the conduction band as well as the capture and emission barriers (including the effect of the alloy splitting) is constructed within an approach making use of the notion of the impurity self-screening.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 385-388
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: 35×4 Substates of DX Centers in AlGaAs:Si
Autorzy:: Ostermayer, G.
Brunthaler, G.
Stöger, G.
Jantsch, W.
Wilamowski, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1929749.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.80.Ey
Opis:: The measured temperature dependent free carrier concentration in AlGaAs:Si samples is compared with a model calculation where we take the full 35 × 4 alloy statistics of the DX center and potential fluctuations into account. Within this statistics we are able to describe the electron capture by a single barrier E$\text{}_{B}$ for all Al-configurations. We compare the alloy statistics with the simple 4 × 1 statistics.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 765-768
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Alloy Splitting of the Te-DX States in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:: Ostermayer, G.
Jantsch, W.
Dobosz, D.
Żytkiewicz, Z. R.
Wilamowski, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1929750.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.80.Ey
Opis:: We report investigations of the Hall effect and conductivity of Te doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 769-772
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja