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Wyświetlanie 1-5 z 5
Tytuł:
PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
Autorzy:
Mycielski, A.
Szadkowski, A.
Łusakowska, E.
Kowalczyk, L.
Domagała, J.
Bąk-Misiuk, J.
Wilamowski, Z.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1991957.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.10.Bk
Opis:
The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 441-445
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
Autorzy:
Janik, E.
Grasza, K.
Mycielski, A.
Bąk-Misiuk, J.
Kachniarz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929755.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
78.55.Et
Opis:
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission in Zn(Se,S) Single Crystals
Autorzy:
Kowalczyk, L.
Mycielski, A.
Szadkowski, A.
Testelin, C.
Rigaux, C.
Menant, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968254.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
81.10.Bk
78.55.Et
Opis:
Two different types of optically pumped stimulated emission were observed at 1.8 K in the high quality Zn(Se,S) crystals grown by low temperature physical vapour transport. One type, occurring at moderate excitation levels, is ascribed to the recombination of excitons localized because of chemical disorder in the two-anion mixed crystal. The other type, occurring at high excitation levels, is related to the inelastic exciton-exciton scattering.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 871-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental and Theoretical Analysis οf PbTe-CdTe Solid Solution Grown by Physical Vapour Transport Method
Autorzy:
Szot, M.
Szczerbakow, A.
Dybko, K.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Łusakowska, E.
Dziawa, P.
Mycielski, A.
Story, T.
Bukała, M.
Galicka, M.
Sankowski, P.
Buczko, R.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791366.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
61.50.Ah
71.20.Nr
78.60.Lc
72.20.Fr
Opis:
Bulk monocrystals of $Pb_{1-x}Cd_{x}Te$, with the Cd content x up to 0.11, were grown by physical vapour transport method. The structural, electrical and optical properties of these ternary crystals were studied experimentally and theoretically. All investigated samples exhibit rock-salt structure and high crystal quality, which was confirmed by X-ray rocking curve width parameter of about 100 arcsec. The decrease of the lattice parameter with increasing Cd content x was found experimentally, in agreement with ab initio calculations. The band structures of $Pb_{1-x}Cd_{x}Te$ mixed crystals for x values up to 0.2 were calculated using tight binding approach. The calculated band gap in the L-point increases with the Cd content in qualitative agreement with photoluminescence measurements in the infrared. For all studied $Pb_{1-x}Cd_{x}Te$ samples, the Hall effect and electrical conductivity measurements, performed in the temperature range from 4 to 300 K, revealed p-type conductivity.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 959-961
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substrates Grown from the Vapor for ZnO Homoepitaxy
Autorzy:
Skupiński, P.
Kopalko, K.
Łusakowska, E.
Domukhovski, V.
Jakieła, R.
Mycielski, A.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811990.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.47.Fg
68.55.J-
68.37.Ps
81.10.Bk
81.15.-z
Opis:
The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1361-1368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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