Autor: Figielski, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: On Electrostatic Aharonov-Bohm Effect in Solids
Autorzy:: Figielski, T.
Wosiński, T.
Morawski, A.
Mąkosa, A.
Powiązania:: https://bibliotekanauki.pl/articles/1969073.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 03.65.Bz
72.15.Gd
Opis:: We analyse conditions for an appearance of the electrostatic Aharonov- Bohm interference in two systems: a single-channel quantum-wire loop and an open ballistic quantum dot. We show that in the first system the effect will be destroyed by charge fluctuations, which probably is the reason why it has not been clearly observed, while in the second system the effect is still open for exploration.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 305-308
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Magnetotransport through Nanoconstriction in Ferromagnetic Semiconductor (Ga,Mn)As
Autorzy:: Figielski, T.
Wosiński, T.
Pelya, O.
Sadowski, J.
Morawski, A.
Mąkosa, A.
Dobrowolski, W.
Jagielski, J.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/2035752.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.63.-b
75.60.-d
73.20.Fz
Opis:: We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 525-531
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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