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    Wyświetlanie 1-3 z 3
    Tytuł:
    Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors
    Autorzy:
    Michalczewski, Krystian
    Tsai, T. Y.
    Martyniuk, P.
    Wu, C. H.
    Powiązania:
    https://bibliotekanauki.pl/articles/201469.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    HOT
    MWIR
    T2SLs
    InAs/InAsSb
    photoresistors
    fotorezystory
    Opis:
    We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K..
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 1; 141-145
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818204.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818207.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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