Temat: 42.55.Wd - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Noise Response and Stability in Injection Locked Semiconductor Ring Laser
Autorzy:: Memon, M.
Fathallah, H.
Powiązania:: https://bibliotekanauki.pl/articles/1195007.pdf
Data publikacji:: 2014-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Wd
42.65.Re
42.60.By
42.65.Pc
Opis:: Stability and effects of optical injection locking in semiconductor ring laser is modeled in detail. It is verified that the injection locking in slave semiconductor ring laser depends on detuning frequency and external optical injection ratio between the master laser and the slave semiconductor ring laser. The stability of injection was locked using the resonance frequency and damping factor. The parasitic phase modulation response due to amplitude modulation (chirp response) is derived and simulated. Similarly parasitic amplitude modulation due to phase modulation response is also investigated.
Źródło:: Acta Physica Polonica A; 2014, 125, 2; 454-455
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Dependence of Modulation Bandwidth on Size of Optical Injection Locked Semiconductor Ring Laser
Autorzy:: Memon, M.
Fathallah, H.
Powiązania:: https://bibliotekanauki.pl/articles/1290582.pdf
Data publikacji:: 2014-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Wd
42.65.Re
42.60.By
42.65.Pc
Opis:: It has been successfully investigated for the first time that strength of optical injection locking also depends on the size of semiconductor ring laser. Theoretical study for frequency response of optical injection locking semiconductor ring laser in the master slave configuration using direct, amplitude and phase modulation of master laser is discussed. In the unidirectional regime the locking range of semiconductor ring laser becomes wider when semiconductor ring laser with smaller size is used. Simulation results predict an incredible enhancement in the modulation bandwidth (> 500 GHz) of the slave semiconductor ring laser when used with smaller laser cavity length (50 μm) in the stable unidirectional regime.
Źródło:: Acta Physica Polonica A; 2014, 125, 2; 462-464
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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