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Wyszukujesz frazę "Medvid, A." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Formation of "black silicon" on a surface of Ni/Si structure by Nd:YAG laser radiation
Autorzy:
Medvid', A.
Karabko, A.
Onufrijevs, P.
Dauksta, E.
Dostanko, A.
Powiązania:
https://bibliotekanauki.pl/articles/385280.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
black silicon
self-organization
microstructures
Nd:YAG laser
Opis:
We have shown the possibility to form a new type of material known as "black silicon". After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm2 the "black silicon" was formed. The formation and self-organization of conelike microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a "black body" absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 140-142
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanism of nanostructure formation on a surface of CdZnTe crystal by laser irradiation
Autorzy:
Medvid', A.
Mychko, A.
Gnatyuk, V. A.
Levytskyi, S.
Naseka, Y.
Powiązania:
https://bibliotekanauki.pl/articles/385161.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
self-organizing structure
Nd:YAG laser
CdZnTe crystal
Opis:
Self-organizing nanometer size structures are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser irradiation (LR) at intensity range of 4-12 MW/cm2. According to this model the Thermogradient effect has the main role in the interaction process of LR and semiconductors. The surface state of the CdZnTe under the influence of Nd:YAG laser irradiation has been studied. A state has been defined by atom force microscope. The influence of LR on the photoluminescence spectrahas show that at a threshold intensity of LR I=4 MW/cm2 creation of nanometer size structure begins. A graded band gap structure with optical window was formed at the top of nano-hills.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 127-129
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanohills in SiGe/Si structure formed by laser radiation
Autorzy:
Medvid', A.
Onufrijev, P.
Lyutovich, K.
Oehme, M.
Kasper, E.
Dmitruk, I.
Pundyk, I.
Manak, I.
Grabovskis, D.
Powiązania:
https://bibliotekanauki.pl/articles/384291.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
nanohills
SiGe
laser
hetero-epitaxial structure
Opis:
Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2. The giant "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm-1 Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 62-64
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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