- Tytuł:
- Piezoelectric Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures
- Autorzy:
-
Knizhny, V. I.
Mironov, O. A.
Makarovskii, O. A.
Braithwaite, G.
Mattey, N. L.
Parker, E. H. C.
Phillips, P. J. - Powiązania:
- https://bibliotekanauki.pl/articles/1933806.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.50.Rb
73.61.Cw
73.50.Μx - Opis:
- We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si $\text{}_{1-x}$/Ge$\text{}_{x}$ system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si $\text{}_{0.88}$Ge$\text{}_{0.12}$/(001)Si structure with a carrier sheet density 2.0 × 10 $\text{}^{11}$ cm$\text{}^{-2}$ and a 4.2 K mobility 10500 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He$\text{}^{3}$ low temperature measurements.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 779-782
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł