- Tytuł:
- Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications
- Autorzy:
-
Manyk, Tetiana
Majkowycz, Kinga
Rutkowski, Jarosław
Martyniuk, Piotr - Powiązania:
- https://bibliotekanauki.pl/articles/2204171.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
IR detectors
HgCdTe avalanche photodiodes
excess noise
gain
dual-band detectors - Opis:
- The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
- Źródło:
-
Opto-Electronics Review; 2023, 31, 2; art. no. e145093
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł