Wszystkie pola: 65.40.G- - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Bands, Bonds, and Polarizations in Nitrides - from Electronic Orbitals to Electronic Devices
Autorzy:: Majewski, J. A.
Zandler, G.
Vogl, P.
Powiązania:: https://bibliotekanauki.pl/articles/2027476.pdf
Data publikacji:: 2001-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Kp
77.65.Ly
Opis:: A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructure, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. Our studies reveal that the nitride based electronic devices have characteristics that predispose them for high power and high frequency applications. We demonstrate also that transistor characteristics are favorably influenced by the internal polarization induced electric fields.
Źródło:: Acta Physica Polonica A; 2001, 100, 2; 249-260
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Modeling of Semiconductor Nanostructures with nextnano$\text{}^{3}$
Autorzy:: Birner, S.
Hackenbuchner, S.
Sabathil, M.
Zandler, G.
Majewski, J. A.
Andlauer, T.
Zibold, T.
Morschl, R.
Trellakis, A.
Vogl, P.
Powiązania:: https://bibliotekanauki.pl/articles/2046896.pdf
Data publikacji:: 2006-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.43.Cd
73.21.Fg
73.61.Ey
77.65.Ly
85.30.Tv
73.40.Mr
Opis:: nextnano$\text{}^{3}$ is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of the carrier dynamics a drift-diffusion model based on a quantum-mechanically calculated density is employed. In this paper we present an overview of the capabilities of nextnano$\text{}^{3}$ and discuss some of the main equations that are implemented into the code. As examples, we first discuss the strain tensor components and the piezoelectric effect associated with a compressively strained InAs layer for different growth directions, secondly, we calculate self-consistently the quantum mechanical electron density of a Double Gate MOSFET, then we compare the intersubband transitions in a multi-quantum well structure that have been obtained with a single-band effective mass approach and with an 8-band k·p model, and finally, we calculate the energy spectrum of a structure in a uniform magnetic field.
Źródło:: Acta Physica Polonica A; 2006, 110, 2; 111-124
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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