Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "I. G." wg kryterium: Autor


Wyświetlanie 1-10 z 10
Tytuł:
Phase Field Modeling of the $Zn_{1-x}Cd_xO$ Solid Solutions
Autorzy:
Shtepliuk, I.
Podolskaia, N.
Lashkarev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1375728.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.60.My
05.70.Ln
61.72.Bb
61.72.Mm
Opis:
The analysis of spinodal decomposition in the $Zn_{1-x}Cd_xO$ ternary alloy was carried out by means of the nonlinear Cahn-Hilliard equation. Interaction parameter as a function of composition x was provided by valence force field simulations and was used in this analysis. The morphological patterns for the ternary alloys with different Cd content (x=5, 10, 50%) were experimentally obtained using the semi-implicit Fourier-spectral method. The simulated microstructure evolution $Zn_{0.95}Cd_{0.05}O$ demonstrates that the microstructure having a form of bicontinuous worm-like network is evolved with the progress of aging. An effect of the phase-field mobility and the gradient energy on the microstructure evolution of the $Zn_{1-x}Cd_xO$ alloys is discussed. It was found that the higher driving force for the decomposition in the higher Cd content film results in a higher decomposition rate revealed by the simulations. The temporal evolution of the simulated $Zn_{0.95}Cd_{0.05}O$ microstructure is in good agreement with experimental results, which have been obtained for this solid solution.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1079-1082
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the clusterization of CdO phase in ZnCdO alloys by modeling fullerene-like Zn₄₄Cd₄O₄₈ cluster
Autorzy:
Ovsiannikova, L.
Kartuzov, V.
Shtepliuk, I.
Lashkarev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1159858.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
78.55.Et
81.05.Dz
81.07.Bc
Opis:
The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈ cluster with consideration of CdO phase clusterization are studied in the frames of density functional theory B3LYP/3-21G(d). It is revealed that an enlargement of CdO phase content in Zn₄₄Cd₄O₄₈ cluster leads to nonlinear rapid increase in cohesive energy and cluster stability, as well as band-gap energy shrinkage.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-41-A-43
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of the Photosensitive Anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe Heterojunctions
Autorzy:
Khomyak, V.
Brus, V.
Ilashchuk, M.
Orletsky, I.
Shtepliuk, I.
Lashkarev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1376075.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.40.Lq
81.15.Lm
Opis:
We have fabricated photosensitive anisotype $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions by a deposition of $Cd_{0.5}Zn_{0.5}O$ film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. $n-Cd_{x}Zn_{1-x}O$/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1163-1166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
Autorzy:
Shtepliuk, I.
Khyzhun, O.
Lashkarev, G.
Khomyak, V.
Lazorenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1403642.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
Opis:
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1034-1038
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of $Ar//O_2$ Gas Ratio on the Properties of the $Zn_{0.9}Cd_{0.1}O$ Films Prepared by DC Reactive Magnetron Sputtering
Autorzy:
Shtepliuk, I.
Lashkarev, G.
Khomyak, V.
Marianchuk, P.
Koreniuk, P.
Myroniuk, D.
Lazorenko, V.
Timofeeva, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492665.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
Opis:
$Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-061-A-065
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
Autorzy:
Shtepliuk, I.
Lashkarev, G.
Khyzhun, O.
Kowalski, B.
Reszka, A.
Khomyak, V.
Lazorenko, V.
Timofeeva, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492932.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:
ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 914-917
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
Autorzy:
Ievtushenko, A.
Khyzhun, O.
Shtepliuk, I.
Tkach, V.
Lazorenko, V.
Lashkarev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1399119.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
77.55.hf
68.55.Ln
Opis:
Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 858-861
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Swift $Xe^{26+}$ Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films
Autorzy:
Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Skuratov, V.
Reszka, A.
Kowalski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1376457.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.60.Hk
Opis:
Here we report the effect of the irradiation by 167 MeV $Xe^{26+}$ ions (in the fluence range up to 3× $10^{12}$ ions/$cm^2$) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1199-1202
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
Autorzy:
Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Lazorenko, V.
Maslyuk, V.
Timofeeva, I.
Romaniuk, A.
Strelchuk, V.
Kolomys, O.
Khomyak, V.
Powiązania:
https://bibliotekanauki.pl/articles/1399153.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.55.Et
71.55.Gs
Opis:
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 891-894
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
Autorzy:
Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1156366.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.61.Ga
Opis:
Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies