- Tytuł:
- Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD
- Autorzy:
-
Firek, P.
Werbowy, A.
Szmidt, J.
Kwietniewski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/308653.pdf
- Data publikacji:
- 2007
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
III-nitrides
thin BN films
electronic properties
RF PACVD - Opis:
- This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of the deposition process parameters on thickness and electronic properties (resistivity r, dielectric strength EBR) of BN films based on ellipsometry and I-V curve measurements at room temperature is studied. The obtained results show that proper selection of deposition process parameters allows BN layers with the required thickness and advantageous values of r and EBR to be fabricated. BN becomes therefore an interesting material for microelectronics applications.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2007, 3; 33-36
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł