Temat: 78.45.+h - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
Autorzy:: Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Powiązania:: https://bibliotekanauki.pl/articles/2038288.pdf
Data publikacji:: 2004-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.45.+h
78.47.+p
78.67.De
Opis:: We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Źródło:: Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
Autorzy:: Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Springis, M.
Tale, I.
Yang, C. C.
Powiązania:: https://bibliotekanauki.pl/articles/2041743.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.45.+h
78.47.+p
78.67.De
Opis:: We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 256-260
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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