Autor: Kim, M. N. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Superconductivity in U-T Alloys (T = Mo, Pt, Nb, Zr) Stabilized in the Cubic γ-U Structure
Autorzy:: Sowa, S.
Kim-Ngan, N.
Krupska, M.
Paukov, M.
Tkach, I.
Havela, L.
Powiązania:: https://bibliotekanauki.pl/articles/1398594.pdf
Data publikacji:: 2016-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Bx
74.70.Ad
72.15.Cz
Opis:: Using ultrafast cooling (with the cooling rate up to 10⁶ K/s) helps to minimize the T-alloying concentration (T = Mo, Pt, Pd, Nb, Zr) necessary to retain the γ-U phase down to low temperatures. All investigated splat-cooled U-T alloys become superconducting with $T_{c}$ in the range of 0.61-2.11 K. The bulk character of superconductivity can be concluded for some of the splats when comparing the specific-heat anomaly at $T_{c}$ with the BCS theory prediction.
Źródło:: Acta Physica Polonica A; 2016, 130, 2; 521-526
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials
Autorzy:: Tarnawski, Z.
Zakrzewska, K.
Kim-Ngan, N.-T.
Krupska, M.
Sowa, S.
Drogowska, K.
Havela, L.
Balogh, A.
Powiązania:: https://bibliotekanauki.pl/articles/1401913.pdf
Data publikacji:: 2015-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Cd
68.49.-h
61.05.C-
68.60.-p
Opis:: Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.
Źródło:: Acta Physica Polonica A; 2015, 128, 3; 431-439
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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